Skyworks Solutions, Inc. Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads DDB2503-000

Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates.Unmounted beam-lead diodes are especially well suited for use in MIC applications. Mounted beam-lead diodes can be easily used in MIC, stripline or other such circuitry. The “Universal Chips” are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. Additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well.
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Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates.Unmounted beam-lead diodes are especially well suited for use in MIC applications. Mounted beam-lead diodes can be easily used in MIC, stripline or other such circuitry. The “Universal Chips” are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. Additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well.
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Suppliers

Company
Product
Description
Supplier Links
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads - DDB2503-000 - Skyworks Solutions, Inc.
Irvine, CA, United States
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads
DDB2503-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads DDB2503-000
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates.Unmounted beam-lead diodes are especially well suited for use in MIC applications. Mounted beam-lead diodes can be easily used in MIC, stripline or other such circuitry. The “Universal Chips” are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. Additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well.

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates.Unmounted beam-lead diodes are especially well suited for use in MIC applications. Mounted beam-lead diodes can be easily used in MIC, stripline or other such circuitry. The “Universal Chips” are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. Additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well.

Supplier's Site
RF Schottky Diode - DDB2503-000 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
DDB2503-000
RF Schottky Diode DDB2503-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
DDB2503-000
Schottky Diodes & Rectifiers DDB2503-000
Schottky Diodes & Rectifiers X-BAND Cj @ 0V .15pF Vf 200-350mV @ 1mA

Schottky Diodes & Rectifiers X-BAND Cj @ 0V .15pF Vf 200-350mV @ 1mA

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - DDB2503-000 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
DDB2503-000
Discrete Semiconductor Products - Diodes - RF Diodes DDB2503-000
X-BAND, SILICON SCHOTTKY BARRIER

X-BAND, SILICON SCHOTTKY BARRIER

Supplier's Site

Technical Specifications

  Skyworks Solutions, Inc. Richardson RFPD VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Schottky Diodes RF Diodes Schottky Diodes RF Diodes
Product Number DDB2503-000 DDB2503-000 DDB2503-000 DDB2503-000
Product Name Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads RF Schottky Diode Schottky Diodes & Rectifiers Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single
Diode Type Schottky
Operating Frequency 40000 MHz
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