With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
Applications
DIODE SIL CARB 1.2KV 8A TO252-2
Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount TO-252-2
Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount TO-252-2
Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount TO-252-2
| Richardson RFPD | ODG (Origin Data Global) | DigiKey | |
|---|---|---|---|
| Product Category | Diodes | Diodes | Diodes |
| Product Number | E4D02120E-TR | E4D02120E-TR | 1697-E4D02120E-TRCT-ND |
| Product Name | Silicon Carbide Diode | Single Diodes | Single Diodes |
| Diode Type | Silicon Carbide Diode | ||
| IF | 2000 mA | ||
| VF | 1.8 volts |
