MACOM Discrete Semiconductor Products - Diodes - RF Diodes MA4AGBLP912

Description
Win Source Part Number: 1337273-MA4AGBLP912 Category: Discrete Semiconductor Products - Diodes - RF Diodes Package: Tray Standard Package: 100 Current - Max: 40 mA Diode Type: PIN - Single Capacitance @ Vr, F: 0.03pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 4.9Ohm @ 20mA, 1GHz Temperature Range - Operating: -65°C ~ 125°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0060 Mfr: MACOM Technology Solutions
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Description
Win Source Part Number: 1337273-MA4AGBLP912 Category: Discrete Semiconductor Products - Diodes - RF Diodes Package: Tray Standard Package: 100 Current - Max: 40 mA Diode Type: PIN - Single Capacitance @ Vr, F: 0.03pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 4.9Ohm @ 20mA, 1GHz Temperature Range - Operating: -65°C ~ 125°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0060 Mfr: MACOM Technology Solutions
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Product
Description
Supplier Links
Discrete Semiconductor Products - Diodes - RF Diodes - 1337273-MA4AGBLP912 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - RF Diodes
1337273-MA4AGBLP912
Discrete Semiconductor Products - Diodes - RF Diodes 1337273-MA4AGBLP912
Win Source Part Number: 1337273-MA4AGBLP912 Category: Discrete Semiconductor Products - Diodes - RF Diodes Package: Tray Standard Package: 100 Current - Max: 40 mA Diode Type: PIN - Single Capacitance @ Vr, F: 0.03pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 4.9Ohm @ 20mA, 1GHz Temperature Range - Operating: -65°C ~ 125°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0060 Mfr: MACOM Technology Solutions

Win Source Part Number: 1337273-MA4AGBLP912
Category: Discrete Semiconductor Products - Diodes - RF Diodes
Package: Tray
Standard Package: 100
Current - Max: 40 mA
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.03pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.9Ohm @ 20mA, 1GHz
Temperature Range - Operating: -65°C ~ 125°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0060
Mfr: MACOM Technology Solutions

Buy Now Datasheet
RF Diodes - 1465-1016-ND - DigiKey
Thief River Falls, MN, United States
RF Diodes
1465-1016-ND
RF Diodes 1465-1016-ND
RF Diode PIN - Single 50V 40mA

RF Diode PIN - Single 50V 40mA

Buy Now Datasheet
RF PIN Diode - MA4AGBLP912 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4AGBLP912
RF PIN Diode MA4AGBLP912
Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, 4?, low capacitance, 28fF, and an extremely fast switching speed of 5ns. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0v, for the isolation state permits the use of a simple +5V TTL gate driver. These AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.

Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, 4?, low capacitance, 28fF, and an extremely fast switching speed of 5ns. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0v, for the isolation state permits the use of a simple +5V TTL gate driver. These AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.

Supplier's Site Datasheet
RF Diodes MA4AGBLP912
RF DIODE PIN 50V

RF DIODE PIN 50V

Supplier's Site Datasheet
50V Diode and Rectifier - 284-MA4AGBLP912 - ERSAELECTRONICS PTE. LTD.
Singapore
50V Diode and Rectifier
284-MA4AGBLP912
50V Diode and Rectifier 284-MA4AGBLP912
RF DIODE PIN 50V Product overview: MA4AGBLP912 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 50V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4AGBLP912 can be used for catalog matching and distributor lookup.

RF DIODE PIN 50V Product overview: MA4AGBLP912 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 50V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4AGBLP912 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
RF DIODE PIN 50V - 482-MA4AGBLP912 - Utmel Electronic Limited
Hong Kong, China
RF DIODE PIN 50V
482-MA4AGBLP912
RF DIODE PIN 50V 482-MA4AGBLP912
RF DIODE PIN 50V

RF DIODE PIN 50V

Supplier's Site
Discrete Semiconductor Products - Diodes - RF Diodes - MA4AGBLP912 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4AGBLP912
Discrete Semiconductor Products - Diodes - RF Diodes MA4AGBLP912
RF DIODE PIN 50V

RF DIODE PIN 50V

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Richardson RFPD ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes RF Diodes RF Diodes RF Diodes Rectifiers RF Diodes RF Diodes
Product Number 1337273-MA4AGBLP912 1465-1016-ND MA4AGBLP912 MA4AGBLP912 284-MA4AGBLP912 482-MA4AGBLP912 MA4AGBLP912
Product Name Discrete Semiconductor Products - Diodes - RF Diodes RF Diodes RF PIN Diode RF Diodes 50V Diode and Rectifier RF DIODE PIN 50V Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single Single Single
Diode Type PIN - Single PIN PIN PIN PIN - Single
CT 0.0300 pF 0.0300 pF 0.0260 pF 0.0300 pF 0.0300 pF
Tj -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F)
VR 50 volts 50 volts
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