Win Source Part Number: 1337273-MA4AGBLP912
Category: Discrete Semiconductor Products - Diodes - RF Diodes
Package: Tray
Standard Package: 100
Current - Max: 40 mA
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.03pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.9Ohm @ 20mA, 1GHz
Temperature Range - Operating: -65°C ~ 125°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0060
Mfr: MACOM Technology Solutions
RF Diode PIN - Single 50V 40mA
Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, 4?, low capacitance, 28fF, and an extremely fast switching speed of 5ns. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0v, for the isolation state permits the use of a simple +5V TTL gate driver. These AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.
RF DIODE PIN 50V Product overview: MA4AGBLP912 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 50V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4AGBLP912 can be used for catalog matching and distributor lookup.
RF DIODE PIN 50V
| Win Source Electronics | DigiKey | Richardson RFPD | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | RF Diodes | RF Diodes | RF Diodes | RF Diodes | Rectifiers | RF Diodes | RF Diodes |
| Product Number | 1337273-MA4AGBLP912 | 1465-1016-ND | MA4AGBLP912 | MA4AGBLP912 | 284-MA4AGBLP912 | 482-MA4AGBLP912 | MA4AGBLP912 |
| Product Name | Discrete Semiconductor Products - Diodes - RF Diodes | RF Diodes | RF PIN Diode | RF Diodes | 50V Diode and Rectifier | RF DIODE PIN 50V | Discrete Semiconductor Products - Diodes - RF Diodes |
| Configuration | Single | Single | Single | ||||
| Diode Type | PIN - Single | PIN | PIN | PIN | PIN - Single | ||
| CT | 0.0300 pF | 0.0300 pF | 0.0260 pF | 0.0300 pF | 0.0300 pF | ||
| Tj | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | |
| VR | 50 volts | 50 volts |