RS Components, Ltd. Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
| Product Name | Notes |
|---|---|
| A range of advanced Smart Power Modules from Fairchild Semiconductor which provide compact high performance solutions for many inverter motor drive applications. The modules integrate optimized gate drive for the... | |
| A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard. • Positive temperaure co-efficient for easy parallel operation. • High... | |
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| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 400 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 600 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 600 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 600 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 650 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 600 V Maximum Gate... | |
| Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 88 (Pulse) A Maximum Collector Emitter Voltage = 600 V Maximum... | |
| Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs... | |
| Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs... | |
| Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance... | |
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| V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT Configuration = 3 Phase Bridge Transistor Configuration = 3 Phase Maximum Continuous Collector Current = 50 A... | |
| V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT Configuration = Series Transistor Configuration = Series Maximum Continuous Collector Current = 100 A Maximum Collector Emitter... | |
| V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT Configuration = Series Transistor Configuration = Series Maximum Continuous Collector Current = 300 A Maximum Collector Emitter... | |
| V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 75 A... | |
| V-Series Configuration = 3 Phase Bridge Transistor Configuration = 3 Phase Maximum Continuous Collector Current = 35 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage =... | |
| V-Series Configuration = 3 Phase Bridge Transistor Configuration = 3 Phase Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage =... | |
| V-Series Configuration = 3 Phase Bridge Transistor Configuration = 3 Phase Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage =... | |
| V-Series Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage =... | |
| V-Series Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 25 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage =... | |
| V-Series Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 35 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage =... | |
| V-Series Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 75 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage =... | |
| V-Series Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 75 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage =... | |
| Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules... |
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