IGBT NPT 1200V 35A 298W Surface Mount D²PAK (TO-263)
IGBT NPT 1200V 35A 298W Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134811-HGT1S10N120BN
Packaging: Reel - TR
Mounting: SMD (SMT)
IGBT Type: NPT
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Total Switching Energy(Ets): 320μJ (on), 800μJ (off)
Turn-on and Turn-off delay time: 23ns/165ns
Testing Conditions: 960V, 10A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 800
IGBTs N-Channel IGBT NPT Series 1200V Product overview: HGT1S10N120BNST from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S10N120BNST can be used for catalog matching and distributor lookup.
IGBT Transistors N-Channel IGBT NPT Series 1200V
IGBT, 1.2KV, 35A, 150DEG C, 298W; Continuous Collector Current:35A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:298W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
IGBT 1200V 35A 298W TO263AB
IGBT 1200V 35A 298W TO263AB
| DigiKey | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGT1S10N120BNSTDKR-ND | HGT1S10N120BNSTCT-ND | 134811-HGT1S10N120BNST | 8076660 | 8076660P | 279-HGT1S10N120BNST | HGT1S10N120BNST | 31Y1824 | HGT1S10N120BNST | HGT1S10N120BNST |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - HGT1S10N120BNST | IGBTs | IGBTs | N-Channel 1200V IGBT Transistor | IGBT Transistors | Igbt, 1.2Kv, 35A, 150Deg C, 298W; Continuous Collector Current Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | Reel | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| Packing Method | Tape Reel | Cut Tape (CT) | Tape Reel; Reel - TR | Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Structure | NPT | NPT |
