Infineon Technologies AG IGBT Discretes IKW50N60T

Description
600 V, 50 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Motor control and drives Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with BSZ160N10NS3 G | N-Channel Power MOSFET IKP10N60T | IGBT Discretes IPB019N08N3 G | N-Channel Power MOSFET IPB042N10N3 G | N-Channel Power MOSFET IKW30N60H3 | IGBT Discretes 1EDI40I12AF | Gate Driver ICs F3L200R12N2H3_B47 | IGBT Modules BSC010N04LSI | N-Channel Power MOSFET IHW30N135R5 | IGBT Discretes 1EDI60I12AF | Gate Driver ICs FP150R12KT4P | IGBT Modules BSC040N10NS5 | N-Channel Power MOSFET IDW10G120C5B | CoolSiC™ Schottky Diodes 2EDL23I06PJ | Gate Driver ICs IR2103S | Gate Driver ICs IPW60R041P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 6EDL04I06PT | Gate Driver ICs BSC020N03LS G | N-Channel Power MOSFET BSC042NE7NS3 G | N-Channel Power MOSFET BSC160N10NS3 G | N-Channel Power MOSFET BSZ160N10NS3 G | N-Channel Power MOSFET IKP10N60T | IGBT Discretes IPB019N08N3 G | N-Channel Power MOSFET IPB042N10N3 G | N-Channel Power MOSFET IKW30N60H3 | IGBT Discretes 1EDI40I12AF | Gate Driver ICs F3L200R12N2H3_B47 | IGBT Modules BSC010N04LSI | N-Channel Power MOSFET 1 2 3 4 5
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Company
Product
Description
Supplier Links
IGBT Discretes - IKW50N60T - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKW50N60T
IGBT Discretes IKW50N60T
600 V, 50 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Motor control and drives Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with BSZ160N10NS3 G | N-Channel Power MOSFET IKP10N60T | IGBT Discretes IPB019N08N3 G | N-Channel Power MOSFET IPB042N10N3 G | N-Channel Power MOSFET IKW30N60H3 | IGBT Discretes 1EDI40I12AF | Gate Driver ICs F3L200R12N2H3_B47 | IGBT Modules BSC010N04LSI | N-Channel Power MOSFET IHW30N135R5 | IGBT Discretes 1EDI60I12AF | Gate Driver ICs FP150R12KT4P | IGBT Modules BSC040N10NS5 | N-Channel Power MOSFET IDW10G120C5B | CoolSiC™ Schottky Diodes 2EDL23I06PJ | Gate Driver ICs IR2103S | Gate Driver ICs IPW60R041P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 6EDL04I06PT | Gate Driver ICs BSC020N03LS G | N-Channel Power MOSFET BSC042NE7NS3 G | N-Channel Power MOSFET BSC160N10NS3 G | N-Channel Power MOSFET BSZ160N10NS3 G | N-Channel Power MOSFET IKP10N60T | IGBT Discretes IPB019N08N3 G | N-Channel Power MOSFET IPB042N10N3 G | N-Channel Power MOSFET IKW30N60H3 | IGBT Discretes 1EDI40I12AF | Gate Driver ICs F3L200R12N2H3_B47 | IGBT Modules BSC010N04LSI | N-Channel Power MOSFET 1 2 3 4 5

600 V, 50 A IGBT discrete with anti-parallel diode in TO-247 package

Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability

Applications

  • Motor control and drives
  • Photovoltaic
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • BSZ160N10NS3 G |
    N-Channel Power MOSFET
  • IKP10N60T |
    IGBT Discretes
  • IPB019N08N3 G |
    N-Channel Power MOSFET
  • IPB042N10N3 G |
    N-Channel Power MOSFET
  • IKW30N60H3 |
    IGBT Discretes
  • 1EDI40I12AF |
    Gate Driver ICs
  • F3L200R12N2H3_B47 |
    IGBT Modules
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • IHW30N135R5 |
    IGBT Discretes
  • 1EDI60I12AF |
    Gate Driver ICs
  • FP150R12KT4P |
    IGBT Modules
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • IDW10G120C5B |
    CoolSiC™ Schottky Diodes
  • 2EDL23I06PJ |
    Gate Driver ICs
  • IR2103S |
    Gate Driver ICs
  • IPW60R041P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 6EDL04I06PT |
    Gate Driver ICs
  • BSC020N03LS G |
    N-Channel Power MOSFET
  • BSC042NE7NS3 G |
    N-Channel Power MOSFET
  • BSC160N10NS3 G |
    N-Channel Power MOSFET
  • BSZ160N10NS3 G |
    N-Channel Power MOSFET
  • IKP10N60T |
    IGBT Discretes
  • IPB019N08N3 G |
    N-Channel Power MOSFET
  • IPB042N10N3 G |
    N-Channel Power MOSFET
  • IKW30N60H3 |
    IGBT Discretes
  • 1EDI40I12AF |
    Gate Driver ICs
  • F3L200R12N2H3_B47 |
    IGBT Modules
  • BSC010N04LSI |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Discrete Semiconductor - IKW50N60T - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
IKW50N60T
Discrete Semiconductor IKW50N60T
IKW50N60 - DISCRETE IGBT WITH AN

IKW50N60 - DISCRETE IGBT WITH AN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IKW50N60T
IGBT Transistors IKW50N60T
IGBT Transistors LOW LOSS DuoPack 600V 50A

IGBT Transistors LOW LOSS DuoPack 600V 50A

Supplier's Site Datasheet
 - 7545409 - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 333 W Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Length = 16.03mm Width = 21.1mm

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 333 W
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Length = 16.03mm
Width = 21.1mm

Supplier's Site
 - 7545409P - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 333 W Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Length = 16.03mm Width = 21.1mm Delivery on production packaging - Tube. This product is non-returnable.

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 333 W
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Length = 16.03mm
Width = 21.1mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9114798 - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 333 W Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Length = 16.03mm Width = 21.1mm Height = 5.16mm

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 333 W
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Length = 16.03mm
Width = 21.1mm
Height = 5.16mm

Supplier's Site
IGBTs - Single - IKW50N60T - 017212-IKW50N60T - Win Source Electronics
Yishun, Singapore
IGBTs - Single - IKW50N60T
017212-IKW50N60T
IGBTs - Single - IKW50N60T 017212-IKW50N60T
Manufacturer: Infineon Technologies Win Source Part Number: 017212-IKW50N60T Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 143ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 310nC Family Name: IKW50N60T Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 333W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2V @ 15V, 50A Total Switching Energy(Ets): 2.6mJ Turn-on and Turn-off delay time: 26ns/299ns Testing Conditions: 400V, 50A, 7 Ohm, 15V Alternative Parts (Cross-Reference): IKW50N60TAFKSA1; IKW50N60TA; STGW30NC60VD; STGW39NC60VD; Introduction Date: November 01, 2004 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017212-IKW50N60T
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 143ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 310nC
Family Name: IKW50N60T
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 333W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2V @ 15V, 50A
Total Switching Energy(Ets): 2.6mJ
Turn-on and Turn-off delay time: 26ns/299ns
Testing Conditions: 400V, 50A, 7 Ohm, 15V
Alternative Parts (Cross-Reference): IKW50N60TAFKSA1; IKW50N60TA; STGW30NC60VD; STGW39NC60VD;
Introduction Date: November 01, 2004
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
IGBT 600V 80A 333W TO247-3 - IKW50N60T - Karl Kruse GmbH & Co. KG
Kaarst, Germany
IGBT 600V 80A 333W TO247-3
IKW50N60T
IGBT 600V 80A 333W TO247-3 IKW50N60T
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG LIXINC Electronics Co., Limited VAST STOCK CO., LIMITED RS Components, Ltd. Win Source Electronics Karl Kruse GmbH & Co. KG
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKW50N60T IKW50N60T IKW50N60T 7545409 017212-IKW50N60T IKW50N60T
Product Name IGBT Discretes Discrete Semiconductor IGBT Transistors IGBTs - Single - IKW50N60T IGBT 600V 80A 333W TO247-3
VCE(on) 600 volts 2 volts
Switching Speed 2 to 20 kHz
tr 29 ns
tf 29 ns
Package Type TO-247; PG-TO247-3 TO-247; TO-247 TO-247; SOT3; PG-TO247-3 TO-247
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