Infineon Technologies AG Power - IGBT - IGBT Discretes - IKP06N60T IKP06N60T

Description
600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS)
  • Power - IGBT - IGBT Discretes - IKP06N60T - IKP06N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IKP06N60T - 1185367-IKP06N60T - Win Source Electronics
    Win Source Electronics
  • IGBTs - 1107169 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1107169P - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1458585 - RS Components, Ltd.
    RS Components, Ltd.
  • Transistor - 44892127 - Radwell International
    Radwell International
  • Transistors - IKP06N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Discretes - IKP06N60T - IKP06N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IKP06N60T
IKP06N60T
Power - IGBT - IGBT Discretes - IKP06N60T IKP06N60T
600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS)

600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package

Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability

Applications

  • Residential air conditioning: Smart (IoT) and efficient cooling
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V 6A IGBT Transistor
279-IKP06N60T
600V 6A IGBT Transistor 279-IKP06N60T
IGBTs LOW LOSS DuoPack 600V 6A Product overview: IKP06N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP06N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS DuoPack 600V 6A Product overview: IKP06N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP06N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IKP06N60T - 1185367-IKP06N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKP06N60T
1185367-IKP06N60T
IGBTs - Single - IKP06N60T 1185367-IKP06N60T
Manufacturer: Infineon Technologies Win Source Part Number: 1185367-IKP06N60T Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1185367-IKP06N60T
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now
IGBTs - 1107169 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107169
IGBTs 1107169
IGBT TrenchStop N-Channel 600V 6A TO220

IGBT TrenchStop N-Channel 600V 6A TO220

Supplier's Site
IGBTs - 1107169P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107169P
IGBTs 1107169P
IGBT TrenchStop N-Channel 600V 6A TO220

IGBT TrenchStop N-Channel 600V 6A TO220

Supplier's Site
IGBTs - 1458585 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1458585
IGBTs 1458585
IGBT TrenchStop N-Channel 600V 6A TO220

IGBT TrenchStop N-Channel 600V 6A TO220

Supplier's Site
Transistor - 44892127 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
44892127
Transistor 44892127
TRANSISTOR IGBT LOW LOSS DUOPACK 600V 6A. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR IGBT LOW LOSS DUOPACK 600V 6A. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKP06N60T
IGBT Transistors IKP06N60T
IGBT Transistors LOW LOSS DuoPack 600V 6A

IGBT Transistors LOW LOSS DuoPack 600V 6A

Buy Now Datasheet
Transistors - IKP06N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IKP06N60T
Transistors IKP06N60T
IGBT Transistors LOW LOSS DuoPack 600V 6A

IGBT Transistors LOW LOSS DuoPack 600V 6A

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics RS Components, Ltd. RS Components, Ltd. Radwell International VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IKP06N60T 279-IKP06N60T 1185367-IKP06N60T 1107169 1107169P 44892127 IKP06N60T IKP06N60T
Product Name Power - IGBT - IGBT Discretes - IKP06N60T 600V 6A IGBT Transistor IGBTs - Single - IKP06N60T IGBTs IGBTs Transistor IGBT Transistors Transistors
VCE(on) 600 volts
Switching Speed 2 to 20 kHz
tr 6 ns
tf 58 ns
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