Infineon Technologies AG Power - IGBT - IGBT Discretes - IGW40N65F5 IGW40N65F5

Description
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design Applications Consumer electronics
  • Power - IGBT - IGBT Discretes - IGW40N65F5 - IGW40N65F5 - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - 1107425P - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1107425 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1459173 - RS Components, Ltd.
    RS Components, Ltd.
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Description
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design Applications Consumer electronics
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Datasheet
Datasheet Summary
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The IGW40N65F5 is a 650V IGBT designed for high-speed switching in industrial power control applications such as solar converters, uninterruptible power supplies, and welding converters. It is packaged in a PG-TO247-3 case with a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.6V at 25°C and 40A collector current, and it meets JEDEC qualifications for target applications. It is RoHS compliant with lead-free plating.

Datasheet Summary
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The IGW40N65F5 is a 650V IGBT designed for high-speed switching in industrial power control applications such as solar converters, uninterruptible power supplies, and welding converters. It is packaged in a PG-TO247-3 case with a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.6V at 25°C and 40A collector current, and it meets JEDEC qualifications for target applications. It is RoHS compliant with lead-free plating.

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Discretes - IGW40N65F5 - IGW40N65F5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IGW40N65F5
IGW40N65F5
Power - IGBT - IGBT Discretes - IGW40N65F5 IGW40N65F5
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design Applications Consumer electronics

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.


Summary of Features

  • 650V breakthrough voltage
  • Compared to Infineon’s Best-in-class HighSpeed 3 family
  • Factor 2.5 lower Q g
  • Factor 2 reduction in switching losses
  • 200mV reduction in V CE(sat)
  • Low C OES/E OSS
  • Mild positive temperature coefficient V CE(sat)
  • Temperature stability of V f

Benefits

  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50V increase in the bus voltage possible without compromising reliability
  • Higher power density design

Applications

  • Consumer electronics
Supplier's Site Datasheet
IGBTs - 1107425P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107425P
IGBTs 1107425P
IGBT TrenchStop N-Channel 650V 40A TO247

IGBT TrenchStop N-Channel 650V 40A TO247

Supplier's Site
IGBTs - 1107425 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107425
IGBTs 1107425
IGBT TrenchStop N-Channel 650V 40A TO247

IGBT TrenchStop N-Channel 650V 40A TO247

Supplier's Site
IGBTs - 1459173 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1459173
IGBTs 1459173
IGBT TrenchStop N-Channel 650V 40A TO247

IGBT TrenchStop N-Channel 650V 40A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGW40N65F5
IGBT Transistors IGW40N65F5
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IGW40N65F5 1107425P 1107425 IGW40N65F5
Product Name Power - IGBT - IGBT Discretes - IGW40N65F5 IGBTs IGBTs IGBT Transistors
VCE(on) 650 volts
Switching Speed 60 to 120 kHz
tr 13 ns
tf 16 ns
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