Infineon Technologies AG IGBT Discretes IKP15N60T

Description
600 V, 15 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes
Request a Quote Datasheet
Description
600 V, 15 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKP15N60T - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKP15N60T
IGBT Discretes IKP15N60T
600 V, 15 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes IKW25N120H3 | IGBT discretes IKW30N65H5 | IGBT discretes IKW40N65ES5 | IGBT discretes IGW40N120H3 | IGBT discretes

600 V, 15 A IGBT discrete with anti-parallel diode in TO220 package

Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability

Applications

  • General purpose motor drive - variating frequency and voltage
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IKW25N120H3 |
    IGBT discretes
  • IKW30N65H5 |
    IGBT discretes
  • IKW40N65ES5 |
    IGBT discretes
  • IGW40N120H3 |
    IGBT discretes
  • IKW25N120H3 |
    IGBT discretes
  • IKW30N65H5 |
    IGBT discretes
  • IKW40N65ES5 |
    IGBT discretes
  • IGW40N120H3 |
    IGBT discretes
  • IKW25N120H3 |
    IGBT discretes
  • IKW30N65H5 |
    IGBT discretes
  • IKW40N65ES5 |
    IGBT discretes
  • IGW40N120H3 |
    IGBT discretes
Supplier's Site Datasheet
Transistors - IKP15N60T - ODG (Origin Data Global)
Shenzhen, China
Transistors
IKP15N60T
Transistors IKP15N60T
TO-220 IGBT Transistors / Modules ROHS

TO-220 IGBT Transistors / Modules ROHS

Supplier's Site
IGBTs - Single - IKP15N60T - 090492-IKP15N60T - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKP15N60T
090492-IKP15N60T
IGBTs - Single - IKP15N60T 090492-IKP15N60T
Manufacturer: Infineon Technologies Win Source Part Number: 090492-IKP15N60T Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 34ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 87nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO220-3 Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 130W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2.05V @ 15V, 15A Total Switching Energy(Ets): 570μJ Turn-on and Turn-off delay time: 17ns/188ns Testing Conditions: 400V, 15A, 15 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 090492-IKP15N60T
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 34ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 87nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO220-3
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 130W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2.05V @ 15V, 15A
Total Switching Energy(Ets): 570μJ
Turn-on and Turn-off delay time: 17ns/188ns
Testing Conditions: 400V, 15A, 15 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
IGBTs - 1107783 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107783
IGBTs 1107783
IGBT TrenchStop N-Channel 600V 15A TO220

IGBT TrenchStop N-Channel 600V 15A TO220

Supplier's Site
IGBTs - 1107783P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT TrenchStop N-Channel 600V 15A TO220

IGBT TrenchStop N-Channel 600V 15A TO220

Supplier's Site
IGBTs - 1458596 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1458596
IGBTs 1458596
IGBT TrenchStop N-Channel 600V 15A TO220

IGBT TrenchStop N-Channel 600V 15A TO220

Supplier's Site
Singapore
600V 15A IGBT Transistor
279-IKP15N60T
600V 15A IGBT Transistor 279-IKP15N60T
IGBTs LOW LOSS DuoPack 600V 15A Product overview: IKP15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP15N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS DuoPack 600V 15A Product overview: IKP15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP15N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 38345855 - Radwell International
Willingboro, NJ, United States
Transistor
38345855
Transistor 38345855
(PRICE/EA) IGBT SINGLE TRANSISTOR, GENERAL PURPOSE, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/EA) IGBT SINGLE TRANSISTOR, GENERAL PURPOSE, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IKP15N60T
IGBT Transistors IKP15N60T
IGBT Transistors LOW LOSS DuoPack 600V 15A

IGBT Transistors LOW LOSS DuoPack 600V 15A

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Radwell International VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IKP15N60T IKP15N60T 090492-IKP15N60T 1107783 1107783P 279-IKP15N60T 38345855 IKP15N60T
Product Name IGBT Discretes Transistors IGBTs - Single - IKP15N60T IGBTs IGBTs 600V 15A IGBT Transistor Transistor IGBT Transistors
VCE(on) 600 volts 2.05 volts
Switching Speed 2 to 20 kHz
tr 11 ns
tf 50 ns
Package Type TO-220; PG-TO220-3 SOT3; PG-TO220-3 TO-220; To-220 TO-220; TO-220 Tube
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