Infineon Technologies AG IGBT Discretes IKW25N120H3

1200 V IGBT with anti-parallel diode in TO-247 package

High speed 1200 V, 25 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

• Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
• Low switching losses for high efficiency
• Excellent V_ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability 5µs
• Offering T_j(max) of 175°C
• Packaged with and without freewheeling diode for increased design freed

Benefits

• Low switching and conduction losses
• Very good EMI behavior
• Can be used with a small gate resistor for reduced delay time and voltage overshoot
• High current density
• Best-in-class 1200 V IGBT efficiency and EMI behavior

Potential Applications

• Industrial Heating and Welding
• Solutions for solar energy systems
• Uninterruptible power supply (UPS)

Applications

• EV charging
• Uninterruptible power supplies (UPS)

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IGBT TrenchStop NChannel 1.2KV 50A TO247

IGBT TrenchStop NChannel 1.2KV 50A TO247

IGBT TrenchStop NChannel 1.2KV 50A TO247

Manufacturer: Infineon Technologies
Win Source Part Number: 088024-IKW25N120H3
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 290ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 115nC
Family Name: IKW25N120H3
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 326W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 25A
Total Switching Energy(Ets): 2.65mJ
Turn-on and Turn-off delay time: 27ns/277ns
Testing Conditions: 600V, 25A, 23 Ohm, 15V
Alternative Parts (Cross-Reference): STGW30N120KD; STGW35NC120HD; STGW25S120DF3;
Introduction Date: January 31, 2006
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW25N120H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 326W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 326W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW25N120H3 can be used for catalog matching and distributor lookup.