Infineon Technologies AG IGBT Discretes IGW75N60H3

Description
High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote Datasheet
Description
High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGW75N60H3 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGW75N60H3
IGBT Discretes IGW75N60H3
High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Photovoltaic Uninterruptible power supplies (UPS)

High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.


Summary of Features

  • Low switching losses for high efficiency
  • Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5µs
  • Offering Tj(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

Benefits

  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior

Applications

  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
IGBTs - 1107445P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT TrenchStop N-Channel 600V 75A TO247

IGBT TrenchStop N-Channel 600V 75A TO247

Supplier's Site
IGBTs - 1107445 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107445
IGBTs 1107445
IGBT TrenchStop N-Channel 600V 75A TO247

IGBT TrenchStop N-Channel 600V 75A TO247

Supplier's Site
IGBTs - 1459177 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1459177
IGBTs 1459177
IGBT TrenchStop N-Channel 600V 75A TO247

IGBT TrenchStop N-Channel 600V 75A TO247

Supplier's Site
IGBT Transistor 279-IGW75N60H3
IGBTs IGBT PRODUCTS TrenchStop Product overview: IGW75N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW75N60H3 can be used for catalog matching and distributor lookup.

IGBTs IGBT PRODUCTS TrenchStop Product overview: IGW75N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW75N60H3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IGW75N60H3 - 1185278-IGW75N60H3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGW75N60H3
1185278-IGW75N60H3
IGBTs - Single - IGW75N60H3 1185278-IGW75N60H3
Manufacturer: Infineon Technologies Win Source Part Number: 1185278-IGW75N60H3 Series: TrenchStop Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -40°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 428W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 225A Switching Energy: 3mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 470nC Td (on/off) @ 25°C: 31ns/265ns Test Condition: 400V, 75A, 5.2 Ohm, 15V Family Name: IGW75N60H3 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.infineon.com Manufacturer Package: PG-TO247-3 Current - Collector (Ic) (Maximum): 140A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 75A Alternative Parts (Cross-Reference): STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU; Introduction Date: December 13, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1185278-IGW75N60H3
Series: TrenchStop
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 428W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 3mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 470nC
Td (on/off) @ 25°C: 31ns/265ns
Test Condition: 400V, 75A, 5.2 Ohm, 15V
Family Name: IGW75N60H3
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO247-3
Current - Collector (Ic) (Maximum): 140A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 75A
Alternative Parts (Cross-Reference): STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU;
Introduction Date: December 13, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IGW75N60H3
IGBT Transistors IGW75N60H3
IGBT Transistors IGBT PRODUCTS TrenchStop

IGBT Transistors IGBT PRODUCTS TrenchStop

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IGW75N60H3 1107445P 1107445 279-IGW75N60H3 1185278-IGW75N60H3 IGW75N60H3
Product Name IGBT Discretes IGBTs IGBTs IGBT Transistor IGBTs - Single - IGW75N60H3 IGBT Transistors
VCE(on) 600 volts
Switching Speed 20 to 100 kHz
tr 60 ns
tf 27 ns
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