High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
Benefits
Applications
IGBT TrenchStop N-Channel 600V 75A TO247
IGBT TrenchStop N-Channel 600V 75A TO247
IGBT TrenchStop N-Channel 600V 75A TO247
IGBTs IGBT PRODUCTS TrenchStop Product overview: IGW75N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW75N60H3 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1185278-IGW75N60H3
Series: TrenchStop
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 428W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 3mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 470nC
Td (on/off) @ 25°C: 31ns/265ns
Test Condition: 400V, 75A, 5.2 Ohm, 15V
Family Name: IGW75N60H3
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO247-3
Current - Collector (Ic) (Maximum): 140A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 75A
Alternative Parts (Cross-Reference): STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU;
Introduction Date: December 13, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
IGBT Transistors IGBT PRODUCTS TrenchStop
| Infineon Technologies AG | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGW75N60H3 | 1107445P | 1107445 | 279-IGW75N60H3 | 1185278-IGW75N60H3 | IGW75N60H3 |
| Product Name | IGBT Discretes | IGBTs | IGBTs | IGBT Transistor | IGBTs - Single - IGW75N60H3 | IGBT Transistors |
| VCE(on) | 600 volts | |||||
| Switching Speed | 20 to 100 kHz | |||||
| tr | 60 ns | |||||
| tf | 27 ns |