Infineon Technologies AG IGBT Discretes IGW75N60H3

High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

• Low switching losses for high efficiency
• Excellent V_ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability 5µs
• Offering T_j(max) of 175°C
• Packaged with and without freewheeling diode for increased design freedom

Benefits

• Low switching and conduction losses
• Very good EMI behavior
• Can be used with a small gate resistor for reduced delay time and voltage overshoot
• High current density
• Best-in-class 600 V IGBT efficiency and EMI behavior

Potential Applications

IGBT Transistors IGBT PRODUCTS TrenchStop

Manufacturer: Infineon Technologies
Win Source Part Number: 1185278-IGW75N60H3
Series: TrenchStop
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 428W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225A
Switching Energy: 3mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 470nC
Td (on/off) @ 25°C: 31ns/265ns
Test Condition: 400V, 75A, 5.2 Ohm, 15V
Family Name: IGW75N60H3
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO247-3
Current - Collector (Ic) (Maximum): 140A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 75A
Alternative Parts (Cross-Reference): STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU;
Introduction Date: December 13, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 428 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm
Delivery on production packaging - Tube. This product is non-returnable.

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 428 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 428 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm