IGBT TRENCH/FS 600V 12A TO252-3 Product overview: IKD06N60RFATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 12A, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKD06N60RFATMA1 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 103291-IKD06N60RFATM
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 48ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 48nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO252-3
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 18A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 6A
Total Switching Energy(Ets): 90μJ (on), 90μJ (off)
Turn-on and Turn-off delay time: 7ns/106ns
Testing Conditions: 400V, 6A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
IGBT TRENCH/FS 600V 12A TO252-3
IGBT Trench Field Stop 600V 12A 100W Surface Mount PG-TO252-3
IGBT Trench Field Stop 600V 12A 100W Surface Mount PG-TO252-3
IGBT Trench Field Stop 600V 12A 100W Surface Mount PG-TO252-3
IGBT Transistors IGBT PRODUCTS
IGBT TRENCH/FS 600V 12A TO252-3
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 2266095 | 279-IKD06N60RFATMA1 | 103291-IKD06N60RFATMA1 | IKD06N60RFATMA1 | IKD06N60RFATMA1TR-ND | IKD06N60RFATMA1CT-ND | IKD06N60RFATMA1 | IKD06N60RFATMA1 |
| Product Name | IGBTs | 600V 12A TO252 IGBT Transistor | IGBTs - Single - IKD06N60RFATMA1 | Single IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-252 (DPAK); TO-252 | Tape & Reel (TR) | SOT3; PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | ||
| PD | 100 milliwatts | 100000 milliwatts | ||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
