IGBT 650V 85A 227W Through Hole PG-TO247-3
Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Transistors 650V IGBT Trenchstop 5
IGW30N65 - LOW V IGBT IN TRENCHS
IGBT, SINGLE, 650V, 85A, TO-247; DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT 650V 30A TRENCHSTOP TO247-3
| DigiKey | Rochester Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGW30N65L5XKSA1IN-ND | IGW30N65L5XKSA1 | 2156634 | IGW30N65L5XKSA1 | IGW30N65L5XKSA1 | 12AC9665 | IGW30N65L5XKSA1 |
| Product Name | Single IGBTs | IGBTs | IGBT Transistors | Single IGBTs | Igbt, Single, 650V, 85A, To-247; Dc Collector Current Infineon | Discrete Semiconductor Products - Transistors - IGBTs | |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
