Infineon Technologies AG IGBT Discretes IGW50N60T

Description
600 V, 50 A IGBT in TO-247 package Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
  • IGBT Discretes - IGW50N60T - Infineon Technologies AG
    Infineon Technologies AG
  • Single IGBTs - IGW50N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - 1107741P - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1107741 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1459182 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - Single - IGW50N60T - 1185276-IGW50N60T - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
600 V, 50 A IGBT in TO-247 package Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGW50N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGW50N60T
IGBT Discretes IGW50N60T
600 V, 50 A IGBT in TO-247 package Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability

600 V, 50 A IGBT in TO-247 package

Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Supplier's Site Datasheet
Single IGBTs - IGW50N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IGW50N60T
Single IGBTs IGW50N60T
IGW50N60 - DISCRETE IGBT WITHOUT

IGW50N60 - DISCRETE IGBT WITHOUT

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V 50A IGBT Transistor
279-IGW50N60T
600V 50A IGBT Transistor 279-IGW50N60T
IGBTs LOW LOSS IGBT TECH 600V 50A Product overview: IGW50N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW50N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS IGBT TECH 600V 50A Product overview: IGW50N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW50N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - 1107741P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107741P
IGBTs 1107741P
IGBT TrenchStop N-Channel 600V 50A TO247

IGBT TrenchStop N-Channel 600V 50A TO247

Supplier's Site
IGBTs - 1107741 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1107741
IGBTs 1107741
IGBT TrenchStop N-Channel 600V 50A TO247

IGBT TrenchStop N-Channel 600V 50A TO247

Supplier's Site
IGBTs - 1459182 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1459182
IGBTs 1459182
IGBT TrenchStop N-Channel 600V 50A TO247

IGBT TrenchStop N-Channel 600V 50A TO247

Supplier's Site
IGBTs - Single - IGW50N60T - 1185276-IGW50N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGW50N60T
1185276-IGW50N60T
IGBTs - Single - IGW50N60T 1185276-IGW50N60T
Manufacturer: Infineon Technologies Win Source Part Number: 1185276-IGW50N60T Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1185276-IGW50N60T
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
IGW50N60T
Triode/MOS Tube/Transistor >> IGBTs IGW50N60T
TO-247-3 IGBTs ROHS

TO-247-3 IGBTs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGW50N60T
IGBT Transistors IGW50N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 50A

IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IGW50N60T IGW50N60T 279-IGW50N60T 1107741P 1107741 1185276-IGW50N60T IGW50N60T IGW50N60T
Product Name IGBT Discretes Single IGBTs 600V 50A IGBT Transistor IGBTs IGBTs IGBTs - Single - IGW50N60T Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors
VCE(on) 600 volts
Switching Speed 2 to 20 kHz
tr 29 ns
tf 29 ns
Package Type TO-247; PG-TO247-3 TO-247; TO-247-3 Tube TO-247; TO-247 TO-247; To-247 SOT3 TO-247
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