Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDIATMA1 BSC0923NDIATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1000424-BSC0923NDIAT MA1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TISON-8 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A, 32A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 1160pF @ 15V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1000424-BSC0923NDIAT MA1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TISON-8 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A, 32A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 1160pF @ 15V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDIATMA1 - 1000424-BSC0923NDIATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDIATMA1
1000424-BSC0923NDIATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDIATMA1 1000424-BSC0923NDIATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1000424-BSC0923NDIAT MA1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TISON-8 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A, 32A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 1160pF @ 15V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1000424-BSC0923NDIATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A, 32A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 1160pF @ 15V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - 448-BSC0923NDIATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
448-BSC0923NDIATMA1DKR-ND
FET, MOSFET Arrays 448-BSC0923NDIATMA1DKR-ND
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Buy Now Datasheet
FET, MOSFET Arrays - 448-BSC0923NDIATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
448-BSC0923NDIATMA1CT-ND
FET, MOSFET Arrays 448-BSC0923NDIATMA1CT-ND
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Buy Now Datasheet
FET, MOSFET Arrays - 448-BSC0923NDIATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
448-BSC0923NDIATMA1TR-ND
FET, MOSFET Arrays 448-BSC0923NDIATMA1TR-ND
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

Buy Now Datasheet
IGBTs - 2735235 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2735235
IGBTs 2735235
Infineon BSC0923NDIATMA1

Infineon BSC0923NDIATMA1

Supplier's Site
IGBTs - 2735236 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2735236
IGBTs 2735236
Infineon BSC0923NDIATMA1

Infineon BSC0923NDIATMA1

Supplier's Site
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R - 376-BSC0923NDIATMA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
376-BSC0923NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R 376-BSC0923NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R

Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC0923NDIATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC0923NDIATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC0923NDIATMA1
MOSFET 2N-CH 30V 17A/32A TISON8

MOSFET 2N-CH 30V 17A/32A TISON8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Insulated Gate Bipolar Transistors (IGBT) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1000424-BSC0923NDIATMA1 448-BSC0923NDIATMA1DKR-ND 2735235 376-BSC0923NDIATMA1 BSC0923NDIATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDIATMA1 FET, MOSFET Arrays IGBTs Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
PD 1000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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