Skyworks Solutions, Inc. Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads CME7660-000

Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.
  • Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads - CME7660-000 - Skyworks Solutions, Inc.
    Skyworks Solutions, Inc.
  • RF Schottky Diode - CME7660-000 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Diodes - RF Diodes - CME7660-000 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads - CME7660-000 - Skyworks Solutions, Inc.
Skyworks Solutions, Inc.
Irvine, CA, United States
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads
CME7660-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads CME7660-000
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.

Supplier's Site
RF Schottky Diode - CME7660-000 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
CME7660-000
RF Schottky Diode CME7660-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - CME7660-000 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
CME7660-000
Discrete Semiconductor Products - Diodes - RF Diodes CME7660-000
SCH CHIP SIL

SCH CHIP SIL

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
CME7660-000
Schottky Diodes & Rectifiers CME7660-000
Schottky Diodes & Rectifiers Ku-Band Cj=.15pF

Schottky Diodes & Rectifiers Ku-Band Cj=.15pF

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Technical Specifications

  Skyworks Solutions, Inc. Richardson RFPD Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Schottky Diodes RF Diodes RF Diodes Schottky Diodes
Product Number CME7660-000 CME7660-000 CME7660-000 CME7660-000
Product Name Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads RF Schottky Diode Discrete Semiconductor Products - Diodes - RF Diodes Schottky Diodes & Rectifiers
Configuration Single
Diode Type Schottky
Operating Frequency 40000 MHz
CT 0.1500 pF
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