Richardson RFPD Datasheets for RF Diodes
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
RF Diodes: Learn more
| Product Name | Notes |
|---|---|
| Dual Diode - Common Anode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered... | |
| Dual Diode - Common Cathode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered... | |
| Dual Diode - Common Cathode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These... | |
| Dual Diode - Series Pair (Tee) Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are... | |
| KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. | |
| M/A-COM Technology Solutions KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low... | |
| M/A-COM Technology Solutions MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to... | |
| M/A-COM Technology Solutions’ MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and... | |
| M/A-COM's MADS-001317-1500 single is a gallium arsenide flip chip Schottky barrier diode. This device is fabricated on OMCVD epitaxial material using a process designed for high device uniformity and extremely... | |
| MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb plating, as well... | |
| MACOM's MA4P7455-1225T is a wideband, lower insertion loss, high IP3, Quad PIN Diode ? Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design... | |
| MACOM's MADP-007167-12250T RoHs equivalent product is a wideband, moderate insertion loss, high IP3, PIN Diode ? Quad Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one... | |
| Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in... | |
| PIN Diode Limiter. The MADL-011023 is a PIN diode limiter assembled in a lead-free 1.5 x 1.2 mm 6-lead TDFN plastic package. This PIN diode limiter provides exceptional low and... | |
| PIN-Schottky Anti-Parallel Diode Limiter. The MADL-011021 is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic packaged that provides both low and high signal frequency operation from 10 MHz... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Schottky Limiter DC-6 GHz. The MADS-011010 is a Schottky limiter assembled in a lead-free 1.5 x 1.2 mm TDFN surface mount plastic package. This device provides broadband performance as well... | |
| Single Diode Configuration: A comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of... | |
| Single Diode Configuration: HIPAX PIN diode series is designed for usage in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorporate a fully passivated... | |
| Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as... | |
| Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb... | |
| Single Diode Configuration: MACOM’s MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM’s patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed... | |
| Single Diode Configuration: MACOM's Broad line of packaged PIN diodes encompasses a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives... | |
| Single Diode Configuration: MACOM's MA45400 series is a highly repeatable, UHCVD/ion-implanted, abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for general... | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for... | |
| Single Diode Configuration: MACOM's series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and... | |
| Single Diode Configuration: Silicon PIN diode, surface mount plastic package for use as a switch where low loss and high isolation is required. These diodes are offered as an RoHS... | |
| Single Diode Configuration: The MA46450 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0. These diodes offer high Q (up to 4000) permitting excellent tuning... | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: The MA4P7441F-1091T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7446F-1091T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7461F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7464F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7470F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques. These diodes have thermal oxide passivation,... | |
| Single Diode Configuration: The MA4ST1300 series is a highly repeatable, UHCVD/ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for high... | |
| Single Diode Configuration: The MA4ST200 series is a ion-implanted, hyperabrupt junction, silicon tuning varactors in surface mount packages. This series of varactors is designed for high Q and low voltage... | |
| Single Diode Configuration: The MA4ST300 series are ion-implanted, hyper abrupt junction, silicon tuning varactors in SC79, SC70 3LD, and SOD-323 surface mount packages. This series of varactors is designed for... | |
| Single Diode Configuration: The MA4ST400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package. These thermal oxide passivated diodes feature high capacitance ratio and quality... | |
| Single Diode Configuration: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550... | |
| Single Diode Configuration: This device is a Silicon-Glass Beam-Lead PIN diode fabricated with MACOM's patented HMIC™ process. This device features one silicon pedestal embedded in a low loss, low dispersion... | |
| Single Diode Configuration: This device is a silicon-glass PIN diode chip fabricated with MACOM's patented HMIC process. This device features two silicon pedestals embedded in a low loss glass. The... | |
| Single Diode Configuration: This device is a silicon-glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The... | |
| Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion... | |
| The axial leaded glass PIN diode series of low and medium power are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and RF... | |
| The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in anti-parallel, shunt power... | |
| The MA4E2200 series are silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. | |
| The MADP-000235-10720T is a surface mount PIN diode in a non-magnetic Metal Electrode Leadless Faced (MELF) package. The MADP-000235-10720T is manufactured using M/A-COM Technology Solutions time proven HIPAX technology. The... | |
| The MADP-009989 diode was designed to protect MRI receivers from high RF energy fields including long RF pulses and RF spike pulses present in most MRI machines. This diode acts... | |
| The MADP-011027 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The... | |
| The MADP-011028 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The... | |
| The MADP-011029 is a lead-free 1.5 x 1.2 mm DFNsurface mount plastic packaged that provides bothlow and high signal frequency operation from50 MHz to 12 GHz. The higher breakdown voltageand... | |
| The MADP-011048 acts as a passive switch using silicon PIN diodes in a non-magnetic surface mount package. There are two sets of diode pairs constructed in an anti-parallel configuration that... | |
| The MADP-011104 is a high-power PIN diode assembled in a lead-free 3 mm 12-lead QFN plastic package. This shunt device provides exceptional switch or attenuator performance from 50 MHz to... | |
| The MADZ-011001 is a terahertz cutoff frequency,gallium arsenide flip chip Schottky barrier diode. Thisdiode is fabricated on a OMCVD epitaxial waferusing a process designed for high device uniformityand extremely low... | |
| The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| The MAVR-011020-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| The MLP71xx Series limiter diodes are specially processed PIN diodes with thin intrinsic regions designed for use in passive or active limiters from 100 MHz to beyond 20 GHz. The... | |
| The MMP4400 series are high-voltage, high-power (cathode base) PIN diodes. These high-resistivity silicon devices are glass passivated for high stability and reliability, and have been proven by thousands of device... | |
| The MPS4101-6LP is a QFN-packaged series/shunt element. The parasitic inductance is minimized in this design resulting in wide-band, low-loss, high-isolation performance. | |
| This device is a silicon, glass PIN diode surmount chip fabricated with MACOM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. | |
| This device is a silicon, glass PIN diode surmount chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. | |
| This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode... | |
| This series of surface mount PIN and Limiter diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the... | |
| This silicon diode is packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. It is suitable for commercial switching along... |
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