Infineon Technologies AG Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon FF8MR12W2M1PB11BPSA1

Description
MOSFET, SIC, N-CH, 1.2KV, 150A, MODULE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:150A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
  • Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon - 91AH7525 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - FF8MR12W2M1PB11BPSA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Datasheet
Description
MOSFET, SIC, N-CH, 1.2KV, 150A, MODULE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:150A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
Datasheet

Suppliers

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Product
Description
Supplier Links
Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon - 91AH7525 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon
91AH7525
Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon 91AH7525
MOSFET, SIC, N-CH, 1.2KV, 150A, MODULE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:150A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, SIC, N-CH, 1.2KV, 150A, MODULE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:150A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FF8MR12W2M1PB11BPSA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FF8MR12W2M1PB11BPSA1
Discrete Semiconductor Products - Transistors - IGBTs FF8MR12W2M1PB11BPSA1
IGBT MODULE LOW POWER EASY

IGBT MODULE LOW POWER EASY

Supplier's Site

Technical Specifications

  Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Insulated Gate Bipolar Transistors (IGBT)
Product Number 91AH7525 FF8MR12W2M1PB11BPSA1
Product Name Mosfet, Sic, N-Ch, 1.2Kv, 150A, Module; Mosfet Module Configuration Infineon Discrete Semiconductor Products - Transistors - IGBTs
IDSS 150000 milliamps
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