Infineon Technologies AG Single FETs, MOSFETs BTS131E3045ANTMA1

Description
N-CHANNEL POWER MOSFET
Description
N-CHANNEL POWER MOSFET
Datasheet
Datasheet Summary
Powered by GS/AI

The BTS131 is an N-channel MOSFET with a logic-level gate, designed for switching applications and featuring an integrated temperature sensor with thyristor-like protection. It is packaged in a TO-220AB case and has a drain-source voltage rating of 50 V, a continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.06 Ω max at V_GS = 4.5 V and I_D = 12 A. The device includes short-circuit protection with a maximum short-circuit current of 80 A and a short-circuit power dissipation of 1200 W. Thermal resistance is ≤1.67 K/W from junction to case and ≤75 K/W from junction to ambient. The operating and storage temperature range is -55 °C to +150 °C. It meets IEC 68-1 climatic category 55/150/56 and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The BTS131 is an N-channel MOSFET with a logic-level gate, designed for switching applications and featuring an integrated temperature sensor with thyristor-like protection. It is packaged in a TO-220AB case and has a drain-source voltage rating of 50 V, a continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.06 Ω max at V_GS = 4.5 V and I_D = 12 A. The device includes short-circuit protection with a maximum short-circuit current of 80 A and a short-circuit power dissipation of 1200 W. Thermal resistance is ≤1.67 K/W from junction to case and ≤75 K/W from junction to ambient. The operating and storage temperature range is -55 °C to +150 °C. It meets IEC 68-1 climatic category 55/150/56 and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BTS131E3045ANTMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BTS131E3045ANTMA1
Single FETs, MOSFETs BTS131E3045ANTMA1
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BTS131E3045ANTMA1
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 50 volts
IDSS 25000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

CSD17570Q5B 30-V, N-Channel NexFET Power MOSFET, CSD17570Q5B - CSD17570Q5BT - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 9.20E-4 ohms
View Details
8 suppliers
Single FETs, MOSFETs - AUIRFR024N-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
6 suppliers
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR - ALD310702PCL - Advanced Linear Devices, Inc.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS -8 volts
View Details
4 suppliers