The BTS131 is an N-channel MOSFET with a logic-level gate, designed for switching applications and featuring an integrated temperature sensor with thyristor-like protection. It is packaged in a TO-220AB case and has a drain-source voltage rating of 50 V, a continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.06 Ω max at V_GS = 4.5 V and I_D = 12 A. The device includes short-circuit protection with a maximum short-circuit current of 80 A and a short-circuit power dissipation of 1200 W. Thermal resistance is ≤1.67 K/W from junction to case and ≤75 K/W from junction to ambient. The operating and storage temperature range is -55 °C to +150 °C. It meets IEC 68-1 climatic category 55/150/56 and is RoHS compliant.
N-CHANNEL POWER MOSFET
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BTS131E3045ANTMA1 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 50 volts |
| IDSS | 25000 milliamps |