The IAUC120N06S5N022 is an automotive-grade N-channel enhancement mode MOSFET designed for power applications, housed in a PG-TDSON-8-34 package with a maximum operating temperature of 175°C. It has a drain-source breakdown voltage of 60 V, a continuous drain current of 120 A under DC conditions, and a typical on-state resistance of 2.24 mΩ at 10 V gate-source voltage. The device supports a pulsed drain current of 568 A, has a single-pulse avalanche energy of 174 mJ, and is rated for ±20 V gate-source voltage. It meets AEC-Q101 qualification, has MSL1 moisture sensitivity, and is RoHS compliant. Thermal resistance from junction to case is 1.10 K/W. The part is avalanche-tested at 100% and is suitable for general automotive applications.
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing conduction and switching losses
Summary of Features
Potential Applications
Suitable for ADAS and Power management applications in automotive segment
Designers who used this product also designed with
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IAUC120N06S5N022 |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC120N06S5N022 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 2.2 to 3.4 volts |
| rDS(on) | 0.0022 ohms |
