Infineon Technologies AG Single FETs, MOSFETs BUZ73A

Description
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet
Description
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BUZ73AIN-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BUZ73AIN-ND
Single FETs, MOSFETs BUZ73AIN-ND
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3

N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73A - 109401-BUZ73A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73A
109401-BUZ73A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73A 109401-BUZ73A
Manufacturer: Infineon Technologies Win Source Part Number: 109401-BUZ73A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 530pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 109401-BUZ73A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Single FETs, MOSFETs - BUZ73A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUZ73A
Single FETs, MOSFETs BUZ73A
MOSFET N-CH 200V 5.5A TO220-3

MOSFET N-CH 200V 5.5A TO220-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUZ73A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUZ73A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUZ73A
MOSFET N-CH 200V 5.5A TO220-3

MOSFET N-CH 200V 5.5A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUZ73AIN-ND 109401-BUZ73A BUZ73A BUZ73A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73A Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; PG-TO-220-3 TO-220; TO-220-3
V(BR)DSS 200 volts 200 volts
PD 40000 milliwatts 40000 milliwatts
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