MOSFET N-CH 200V 5.5A TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 109401-BUZ73A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 200V 5.5A TO220-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | BUZ73A | 109401-BUZ73A | BUZ73AIN-ND | BUZ73A |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 200 volts | 200 volts | ||
| IDSS | 5500 milliamps |
