Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1027909-BUZ31LHXKSA1
Length: 10.36 mm
Contact Plating: Tin
Mounting: SMD (SMT)
Input Capacitance: 1.6 nF
Power Dissipation: 95 W
Height: 9.45 mm
Number of Pins: 3
Width: 4.57 mm
Rise Time: 80 ns
Fall Time: 65 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): IRF9530NPBF; SPP15P10PGHKSA1; FQP16N15; STF19NF20; STF17NF25; SPP15P10PHXKSA1BUZ 31L H; BUZ31L H; BUZ31LH;
Halogen Free: Halogen Free
Popularity: Low
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 95 W
Turn-On Delay Time: 25 ns
Continuous Drain Current (ID): 13.5 A
Drain to Source Breakdown Voltage: 200 V
Turn-Off Delay Time: 210 ns
Drain to Source Resistance: 200 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 200 mΩ
Threshold Voltage: 1.6 V
MOSFET Transistor, N Channel, 13.5 A, 200 V, 0.16 ohm, 5 V, 1.6 V RoHS Compliant: Yes
| Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1027909-BUZ31LHXKSA1 | 85X4161 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31LHXKSA1 | Mosfet Transistor, N Channel, 13.5 A, 200 V, 0.16 Ohm, 5 V, 1.6 V Rohs Compliant Infineon |
| V(BR)DSS | 200 volts | |
| rDS(on) | 0.2000 ohms | |
| PD | 95000 milliwatts |
