Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1 FF2600UXTR33T2M1

Description
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing .XT interconnection technology Benefits Energy efficiency High power density Enhanced lifetime Applications Energy Storage Systems Hydrogen electrolysis Photovoltaic Traction
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1 - FF2600UXTR33T2M1 - Infineon Technologies AG
    Infineon Technologies AG
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Description
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing .XT interconnection technology Benefits Energy efficiency High power density Enhanced lifetime Applications Energy Storage Systems Hydrogen electrolysis Photovoltaic Traction
Request a Quote Datasheet

Suppliers

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Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1 - FF2600UXTR33T2M1 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1
FF2600UXTR33T2M1
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1 FF2600UXTR33T2M1
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing .XT interconnection technology Benefits Energy efficiency High power density Enhanced lifetime Applications Energy Storage Systems Hydrogen electrolysis Photovoltaic Traction

XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation.


Summary of Features

  • CoolSiC™ MOSFET 3.3 kV
  • Integrated body diode
  • XHP™ 2 housing
  • .XT interconnection technology

Benefits

  • Energy efficiency
  • High power density
  • Enhanced lifetime

Applications

  • Energy Storage Systems
  • Hydrogen electrolysis
  • Photovoltaic
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FF2600UXTR33T2M1
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2600UXTR33T2M1
Transistor Technology / Material Silicon carbide
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