Infineon Technologies AG Single FETs, MOSFETs BUZ73ALHXKSA1

Description
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet
Description
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BUZ73ALHXKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BUZ73ALHXKSA1-ND
Single FETs, MOSFETs BUZ73ALHXKSA1-ND
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3

N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
Singapore, Singapore
200V 5.5A TO220 MOSFET Transistor
278-BUZ73ALHXKSA1
200V 5.5A TO220 MOSFET Transistor 278-BUZ73ALHXKSA1
MOSFET N-CH 200V 5.5A TO220-3 Product overview: BUZ73ALHXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUZ73ALHXKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 5.5A TO220-3 Product overview: BUZ73ALHXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUZ73ALHXKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73ALHXKSA1 - 1025474-BUZ73ALHXKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73ALHXKSA1
1025474-BUZ73ALHXKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73ALHXKSA1 1025474-BUZ73ALHXKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1025474-BUZ73ALHXKSA 1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 840pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1025474-BUZ73ALHXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUZ73ALHXKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUZ73ALHXKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUZ73ALHXKSA1
MOSFET N-CH 200V 5.5A TO220-3

MOSFET N-CH 200V 5.5A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUZ73ALHXKSA1-ND 278-BUZ73ALHXKSA1 1025474-BUZ73ALHXKSA1 BUZ73ALHXKSA1
Product Name Single FETs, MOSFETs 200V 5.5A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ73ALHXKSA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; PG-TO-220-3
MOSFET Operating Mode Enhancement
V(BR)DSS 200 volts 200 volts
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