MOSFET N-CH 49V 80A TO220-7 Product overview: BTS282ZE3230AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 49V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 49V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BTS282ZE3230AKSA
MOSFET N-CH 49V 80A TO220-7
N-Channel 49V 80A (Tc) 300W (Tc) Through Hole PG-TO220-7-12
Manufacturer: Infineon Technologies
Win Source Part Number: 1024862-BTS282ZE3230
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Temperature Sensing Diode
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO220-7
Dimension: TO-220-7
Drain-Source Breakdown Voltage: 49V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 240μA
Max Gate Charge: 232nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 36A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
MOSFET, AEC-Q101, N-CH, 49V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:49V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N-CH 49V 80A TO220-7
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-BTS282ZE3230AKSA2 | BTS282ZE3230AKSA2 | BTS282ZE3230AKSA2-ND | 1024862-BTS282ZE3230AKSA2 | BTS282ZE3230AKSA2 | 13AC8358 | BTS282ZE3230AKSA2 |
| Product Name | 49V 80A TO220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS282ZE3230AKSA2 | MOSFET | Mosfet, Aec-Q101, N-Ch, 49V, To-220; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 49 volts | 49 volts | 49 volts | ||||
| Transconductance | 0.0300 kS | ||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts |
