FF3MR20KM1H is a 62 mm C-series silicon carbide MOSFET half-bridge module with a 2000 V drain-source voltage rating and a continuous drain current of 375 A at 25 °C. It features an internal inductance of 20 nH, a on-resistance of 2.6 mΩ at 25 °C, and a junction-to-case thermal resistance of 0.0880 K/W. The module has a 4 kV AC 1-minute insulation voltage, 29.0 mm creepage distance between terminals and heat sink, and operates from -40 °C to 175 °C. It meets IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FF3MR20KM1H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H |
| Transistor Technology / Material | Silicon carbide |
