Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H FF3MR20KM1H

Description
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications Energy Storage Systems EV charging Photovoltaic Traction Uninterruptible power supplies (UPS)
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Description
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications Energy Storage Systems EV charging Photovoltaic Traction Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H - FF3MR20KM1H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H
FF3MR20KM1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H FF3MR20KM1H
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications Energy Storage Systems EV charging Photovoltaic Traction Uninterruptible power supplies (UPS)

62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).


Summary of Features

  • High current density
  • Low switching losses
  • Superior gate oxide reliability
  • Robust integrated body diode
  • High cosmic ray robustness
  • High speed switching module
  • Symmetrical module design
  • Standard construction technique

Benefits

  • Minimizes cooling efforts
  • Reduction in volume and size
  • Reduced system costs
  • Improved chip performance

Applications

  • Energy Storage Systems
  • EV charging
  • Photovoltaic
  • Traction
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FF3MR20KM1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF3MR20KM1H
Transistor Technology / Material Silicon carbide
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