Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G BSZ42DN25NS3 G

Manufacturer: Infineon Technologies
Win Source Part Number: 763601-BSZ42DN25NS3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TSDSON-8
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 4V @ 13μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 430pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 33.8W (Tc)
Rds On (Maximum) @ Id, Vgs: 425 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 250V 5A TDSON-8 OptiMOS 3 Product overview: BSZ42DN25NS3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ42DN25NS3 G can be used for catalog matching and distributor lookup.