Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G BSZ42DN25NS3 G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 763601-BSZ42DN25NS3 G Series: OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TSDSON-8 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 13μA Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 430pF @ 100V Vgs (Maximum): ±20V Power Dissipation (Maximum): 33.8W (Tc) Rds On (Maximum) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 763601-BSZ42DN25NS3 G Series: OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TSDSON-8 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 13μA Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 430pF @ 100V Vgs (Maximum): ±20V Power Dissipation (Maximum): 33.8W (Tc) Rds On (Maximum) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G - 763601-BSZ42DN25NS3 G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G
763601-BSZ42DN25NS3 G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G 763601-BSZ42DN25NS3 G
Manufacturer: Infineon Technologies Win Source Part Number: 763601-BSZ42DN25NS3 G Series: OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TSDSON-8 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 13μA Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 430pF @ 100V Vgs (Maximum): ±20V Power Dissipation (Maximum): 33.8W (Tc) Rds On (Maximum) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 763601-BSZ42DN25NS3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TSDSON-8
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 4V @ 13μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 430pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 33.8W (Tc)
Rds On (Maximum) @ Id, Vgs: 425 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
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MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 763601-BSZ42DN25NS3 G BSZ42DN25NS3 G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ42DN25NS3 G MOSFET
PD 33800 milliwatts
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