Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B FS950R08A6P2B

Description
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin baseplate and performance ceramic. Summary of Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Cres Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature: Tvj op = 175°C Benefits Compact Design Direct Cooled Base Plate and performance ceramic Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant Mechanical guiding elements Potential Applications Automotive Applications Hybrid und Battery Electric Vehicles Commercial, Construction and Agriculture Vehicles Applications EV traction inverter Designers who used this product also designed with IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1 2
  • Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B - FS950R08A6P2B - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin baseplate and performance ceramic. Summary of Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Cres Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature: Tvj op = 175°C Benefits Compact Design Direct Cooled Base Plate and performance ceramic Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant Mechanical guiding elements Potential Applications Automotive Applications Hybrid und Battery Electric Vehicles Commercial, Construction and Agriculture Vehicles Applications EV traction inverter Designers who used this product also designed with IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1 2
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The FS950R08A6P2B is an automotive-qualified HybridPACK Drive module with EDT2 IGBT and diode for hybrid and electric vehicle traction inverters. It is packaged in a module with a direct-cooled PinFin baseplate, press-fit signal terminals, and an integrated NTC temperature sensor. The module has a blocking voltage of 750 V, continuous DC collector current of 450 A, and operates with a junction temperature up to 175 °C. It features a 4.2 kV DC insulation withstand voltage, 9.0 mm creepage distance, and 4.5 mm clearance. The baseplate is copper with nickel plating, and the module complies with RoHS and UL 94 V-0 standards. It has a stray inductance of 8.0 nH and weighs 720 g.

Datasheet Summary
Powered by GS/AI

The FS950R08A6P2B is an automotive-qualified HybridPACK Drive module with EDT2 IGBT and diode for hybrid and electric vehicle traction inverters. It is packaged in a module with a direct-cooled PinFin baseplate, press-fit signal terminals, and an integrated NTC temperature sensor. The module has a blocking voltage of 750 V, continuous DC collector current of 450 A, and operates with a junction temperature up to 175 °C. It features a 4.2 kV DC insulation withstand voltage, 9.0 mm creepage distance, and 4.5 mm clearance. The baseplate is copper with nickel plating, and the module complies with RoHS and UL 94 V-0 standards. It has a stray inductance of 8.0 nH and weighs 720 g.

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B - FS950R08A6P2B - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B
FS950R08A6P2B
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B FS950R08A6P2B
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin baseplate and performance ceramic. Summary of Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Cres Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature: Tvj op = 175°C Benefits Compact Design Direct Cooled Base Plate and performance ceramic Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant Mechanical guiding elements Potential Applications Automotive Applications Hybrid und Battery Electric Vehicles Commercial, Construction and Agriculture Vehicles Applications EV traction inverter Designers who used this product also designed with IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSL606SN | Small signal/small power MOSFET BSZ15DC02KD H | Dual MOSFET BSS306N | Small signal/small power MOSFET BSP762T | Classic PROFET™ 24V | automotive smart high-side switch 1EDI2002AS | Gate driver ICs IAUC41N06S5L100 | Automotive MOSFET 1 2

The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin baseplate and performance ceramic.


Summary of Features

  • Blocking voltage 750V
  • Low VCEsat
  • Low Switching Losses
  • Low Qg and Cres
  • Low Inductive Design
  • Tvj op = 150°C
  • Short-time extended Operation Temperature: Tvj op = 175°C

Benefits

  • Compact Design
  • Direct Cooled Base Plate and performance ceramic
  • Integrated NTC temperature sensor
  • PressFIT Contact Technology
  • RoHS compliant
  • Mechanical guiding elements

Potential Applications

  • Automotive Applications
  • Hybrid und Battery Electric Vehicles
  • Commercial, Construction and Agriculture Vehicles

Applications

  • EV traction inverter

Designers who used this product also designed with


  • IAUC41N06S5L100 |
    Automotive MOSFET
  • 1EBN1001AE |
    Gate driver ICs
  • BSL606SN |
    Small signal/small power MOSFET
  • BSZ15DC02KD H |
    Dual MOSFET
  • BSS306N |
    Small signal/small power MOSFET
  • BSP762T |
    Classic PROFET™ 24V | automotive smart high-side switch
  • 1EDI2002AS |
    Gate driver ICs
  • IAUC41N06S5L100 |
    Automotive MOSFET
  • 1EBN1001AE |
    Gate driver ICs
  • BSL606SN |
    Small signal/small power MOSFET
  • BSZ15DC02KD H |
    Dual MOSFET
  • BSS306N |
    Small signal/small power MOSFET
  • BSP762T |
    Classic PROFET™ 24V | automotive smart high-side switch
  • 1EDI2002AS |
    Gate driver ICs
  • IAUC41N06S5L100 |
    Automotive MOSFET

1
2

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FS950R08A6P2B
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS950R08A6P2B
VCES 750 volts
VCE(on) 1.1 volts
IC(max) 1900 amps
Unlock Full Specs
to access all available technical data