The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles
Summary of Features
VDSS = 1200 V
IDN = 190 A / IDRM = 380 A
Low inductive design ≤ 8 nH
Low RDS (on)
Low switching losses
Low Qg and Crss
New semiconductor material - silicon carbide
Tvj,op = 175°C
Benefits
4.25 kV DC 1 second insulation
Compact design
High power density
AlN Substrate with low thermal resistance
Integrated NTC temperature sensor
RoHS compliant
UL 94 V0 module frame
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles
Summary of Features
- VDSS = 1200 V
- IDN = 190 A / IDRM = 380 A
- Low inductive design ≤ 8 nH
- Low RDS (on)
- Low switching losses
- Low Qg and Crss
- New semiconductor material - silicon carbide
- Tvj,op = 175°C
Benefits
- 4.25 kV DC 1 second insulation
- Compact design
- High power density
- AlN Substrate with low thermal resistance
- Integrated NTC temperature sensor
- RoHS compliant
- UL 94 V0 module frame
