Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FF06MR12A04MA2 FF06MR12A04MA2

Description
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles Summary of Features VDSS = 1200 V IDN = 190 A / IDRM = 380 A Low inductive design ≤ 8 nH Low RDS (on) Low switching losses Low Qg and Crss New semiconductor material - silicon carbide Tvj,op = 175°C Benefits 4.25 kV DC 1 second insulation Compact design High power density AlN Substrate with low thermal resistance Integrated NTC temperature sensor RoHS compliant UL 94 V0 module frame
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Description
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles Summary of Features VDSS = 1200 V IDN = 190 A / IDRM = 380 A Low inductive design ≤ 8 nH Low RDS (on) Low switching losses Low Qg and Crss New semiconductor material - silicon carbide Tvj,op = 175°C Benefits 4.25 kV DC 1 second insulation Compact design High power density AlN Substrate with low thermal resistance Integrated NTC temperature sensor RoHS compliant UL 94 V0 module frame
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Datasheet
Datasheet Summary
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The FF06MR12A04MA2 is a HybridPACK™ DSC S module with silicon carbide MOSFETs for automotive power train applications, featuring a 1200 V drain-source voltage rating, 190 A continuous and 380 A pulsed drain current, and an operating junction temperature of 175°C. It has a stray inductance of 7.5 nH, a module lead resistance of 0.45 mΩ per switch at 25°C, and is mounted in a compact package with an AlN substrate. The module includes an integrated NTC temperature sensor, provides 4.25 kV DC insulation for one second, and meets RoHS compliance and UL 94 V0 flammability standards. Its storage temperature range is -40°C to 125°C, and it weighs 30.9 g.

Datasheet Summary
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The FF06MR12A04MA2 is a HybridPACK™ DSC S module with silicon carbide MOSFETs for automotive power train applications, featuring a 1200 V drain-source voltage rating, 190 A continuous and 380 A pulsed drain current, and an operating junction temperature of 175°C. It has a stray inductance of 7.5 nH, a module lead resistance of 0.45 mΩ per switch at 25°C, and is mounted in a compact package with an AlN substrate. The module includes an integrated NTC temperature sensor, provides 4.25 kV DC insulation for one second, and meets RoHS compliance and UL 94 V0 flammability standards. Its storage temperature range is -40°C to 125°C, and it weighs 30.9 g.

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Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FF06MR12A04MA2 - FF06MR12A04MA2 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FF06MR12A04MA2
FF06MR12A04MA2
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FF06MR12A04MA2 FF06MR12A04MA2
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles Summary of Features VDSS = 1200 V IDN = 190 A / IDRM = 380 A Low inductive design ≤ 8 nH Low RDS (on) Low switching losses Low Qg and Crss New semiconductor material - silicon carbide Tvj,op = 175°C Benefits 4.25 kV DC 1 second insulation Compact design High power density AlN Substrate with low thermal resistance Integrated NTC temperature sensor RoHS compliant UL 94 V0 module frame

The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles


Summary of Features

  • VDSS = 1200 V
  • IDN = 190 A / IDRM = 380 A
  • Low inductive design ≤ 8 nH
  • Low RDS (on)
  • Low switching losses
  • Low Qg and Crss
  • New semiconductor material - silicon carbide
  • Tvj,op = 175°C

Benefits

  • 4.25 kV DC 1 second insulation
  • Compact design
  • High power density
  • AlN Substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • RoHS compliant
  • UL 94 V0 module frame
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF06MR12A04MA2
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FF06MR12A04MA2
Package Type PG-MDIP-11
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