Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102 IAUC50N08S5N102

Description
The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor control. Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Belt starter generator 48 V – inverter ISG EV traction inverter Multi-port fuel injection On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC41N06S5L100 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs 1 2 3
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102 - IAUC50N08S5N102 - Infineon Technologies AG
    Infineon Technologies AG
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Description
The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor control. Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Belt starter generator 48 V – inverter ISG EV traction inverter Multi-port fuel injection On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC41N06S5L100 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs 1 2 3
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Datasheet
Datasheet Summary
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The IAUC50N08S5N102 is an automotive-grade N-channel enhancement-mode MOSFET designed for high-efficiency power conversion in applications such as DC-DC converters and motor control. It is packaged in a PG-TDSON-8-33 case measuring 5 mm × 6 mm, with a maximum junction temperature of 175°C and a peak reflow temperature rating of 260°C. The device has a maximum drain-source breakdown voltage of 80 V, a continuous drain current of 50 A at 25°C, and a maximum on-state resistance of 10.2 mΩ at VGS = 10 V and ID = 25 A. It supports a single-pulse avalanche energy of 45 mJ and is 100% avalanche tested. The part is RoHS compliant, meets MSL1 reflow requirements, and is qualified to AEC-Q100.

Datasheet Summary
Powered by GS/AI

The IAUC50N08S5N102 is an automotive-grade N-channel enhancement-mode MOSFET designed for high-efficiency power conversion in applications such as DC-DC converters and motor control. It is packaged in a PG-TDSON-8-33 case measuring 5 mm × 6 mm, with a maximum junction temperature of 175°C and a peak reflow temperature rating of 260°C. The device has a maximum drain-source breakdown voltage of 80 V, a continuous drain current of 50 A at 25°C, and a maximum on-state resistance of 10.2 mΩ at VGS = 10 V and ID = 25 A. It supports a single-pulse avalanche energy of 45 mJ and is 100% avalanche tested. The part is RoHS compliant, meets MSL1 reflow requirements, and is qualified to AEC-Q100.

Suppliers

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Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102 - IAUC50N08S5N102 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102
IAUC50N08S5N102
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102 IAUC50N08S5N102
The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor control. Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Belt starter generator 48 V – inverter ISG EV traction inverter Multi-port fuel injection On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC41N06S5L100 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IPB80P04P4-05 | Automotive MOSFET IPBE65R050CFD7A | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE42644G | OPTIREG™ linear voltage regulators (LDO) 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs 1 2 3

The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor control.


Summary of Features

  • OptiMOSTM 5 – power MOSFET for automotive applications
  • N-channel - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested

Applications

  • Belt starter generator 48 V – inverter ISG
  • EV traction inverter
  • Multi-port fuel injection
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • AIMBG120R080M1 |
    Silicon Carbide MOSFET Discretes
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • IPB80P04P4-05 |
    Automotive MOSFET
  • IPBE65R050CFD7A |
    Automotive MOSFET
  • SAK-TC365DP-64F300W AA |
    AURIX™ Family – TC36xDP
  • TLE42644G |
    OPTIREG™ linear voltage regulators (LDO)
  • 1EDI3031AS |
    Gate driver ICs
  • 1EDI3021AS |
    Gate driver ICs
  • TLE9261-3BQX V33 |
    OPTIREG™ Mid-Range+ SBC
  • IAUC41N06S5L100 |
    Automotive MOSFET
  • BSS308PE |
    Small signal/small power MOSFET
  • BSL215C |
    Dual MOSFET
  • AIMBG120R080M1 |
    Silicon Carbide MOSFET Discretes
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • IPB80P04P4-05 |
    Automotive MOSFET
  • IPBE65R050CFD7A |
    Automotive MOSFET
  • SAK-TC365DP-64F300W AA |
    AURIX™ Family – TC36xDP
  • TLE42644G |
    OPTIREG™ linear voltage regulators (LDO)
  • 1EDI3031AS |
    Gate driver ICs
  • 1EDI3021AS |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUC50N08S5N102
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUC50N08S5N102
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3.8 volts
rDS(on) 0.0102 ohms
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