Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ30A H BUZ30A H

Manufacturer: Infineon Technologies
Win Source Part Number: 1025467-BUZ30A H
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 200V 21A TO220-3 Product overview: BUZ30A H from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 21A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 21A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BUZ30A H can be used for catalog matching and distributor lookup.