Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS113A E3045A BTS113A E3045A

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201545-BTS113A E3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 170 mOhm @ 5.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 201545-BTS113A E3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 170 mOhm @ 5.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS113A E3045A - 201545-BTS113A E3045A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS113A E3045A
201545-BTS113A E3045A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS113A E3045A 201545-BTS113A E3045A
Manufacturer: Infineon Technologies Win Source Part Number: 201545-BTS113A E3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 170 mOhm @ 5.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 201545-BTS113A E3045A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 560pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 170 mOhm @ 5.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 201545-BTS113A E3045A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS113A E3045A
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 40000 milliwatts
Unlock Full Specs
to access all available technical data