Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF6MR12KM1H FF6MR12KM1H

62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Applications Energy Storage Systems EV charging Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with FF4MR20KM1H | Silicon Carbide CoolSiC™ MOSFET Modules CY7C1061G30-10ZSXI | Asynchronous SRAM XMC4400-F100F512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 FF4MR20KM1H | Silicon Carbide CoolSiC™ MOSFET Modules CY7C1061G30-10ZSXI | Asynchronous SRAM XMC4400-F100F512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 FF4MR20KM1H | Silicon Carbide CoolSiC™ MOSFET Modules CY7C1061G30-10ZSXI | Asynchronous SRAM XMC4400-F100F512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4