Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs F423MR12W1M1PB11BPSA1

Description
MOSFET 4N-CH 1200V 50A AG-EASY1B
Datasheet
Description
MOSFET 4N-CH 1200V 50A AG-EASY1B
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - F423MR12W1M1PB11BPSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
F423MR12W1M1PB11BPSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs F423MR12W1M1PB11BPSA1
MOSFET 4N-CH 1200V 50A AG-EASY1B

MOSFET 4N-CH 1200V 50A AG-EASY1B

Supplier's Site
Mosfet, Sic, N-Ch, 1.2Kv, 50A, Module; Mosfet Module Configuration Infineon - 91AH7585 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 50A, Module; Mosfet Module Configuration Infineon
91AH7585
Mosfet, Sic, N-Ch, 1.2Kv, 50A, Module; Mosfet Module Configuration Infineon 91AH7585
MOSFET, SIC, N-CH, 1.2KV, 50A, MODULE; MOSFET Module Configuration:Full Bridge; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, SIC, N-CH, 1.2KV, 50A, MODULE; MOSFET Module Configuration:Full Bridge; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number F423MR12W1M1PB11BPSA1 91AH7585
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Sic, N-Ch, 1.2Kv, 50A, Module; Mosfet Module Configuration Infineon
Packing Method Tray
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