The FS1150R08A8P3LBC is a HybridPACK™ Drive G2 power module designed for hybrid and electric vehicle drivetrains, featuring a six-pack configuration with 750 V blocking voltage, 1150 A continuous current, and 2300 A peak current. It employs a direct-cooled PinFin baseplate with PressFIT contact technology, a Cu+Ni baseplate, and Si₃N₄ ceramic insulation. The module supports an operating junction temperature of 175°C, with short-term extended operation up to 185°C, and includes an integrated on-chip temperature sensor. It meets 4.2 kV DC insulation for 1 second, has 9.5 mm creepage and 4.5 mm clearance, and complies with RoHS. The module is qualified to AQG 324 and weighs 760 g.
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FS1150R08A8P3LBC |
| Product Name | Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS1150R08A8P3LBC |
| VCES | 750 volts |
