The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
Summary of Features
VCES = 750 V
ICN = 1150 A / ICRM = 2300 A
Blocking voltage 750 V
Low VCE,sat
Low switching losses
Low Qg and Crss
Low inductive design
4.2 kV DC 1 second insulation
High creepage and clearance distances
Direct-cooled PinFin base plate
PCB and cooler assembly guidelines
PressFIT contact technology
Benefits
Higher temperature cycling capability
Integrated diode temperature sensors
New plastic material
Better temperature capability
New frame design
Lower system BOM
Lower AC contact resistance
Lower tab temperature
PressFIT Contact Technology
RoHS compliant
Completely Pb free
Superior reliability
Potential Applications
Automotive applications
(Hybrid) electrical vehicles (H)EV
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
Summary of Features
- VCES = 750 V
- ICN = 1150 A / ICRM = 2300 A
- Blocking voltage 750 V
- Low VCE,sat
- Low switching losses
- Low Qg and Crss
- Low inductive design
- 4.2 kV DC 1 second insulation
- High creepage and clearance distances
- Direct-cooled PinFin base plate
- PCB and cooler assembly guidelines
- PressFIT contact technology
Benefits
- Higher temperature cycling capability
- Integrated diode temperature sensors
- New plastic material
- Better temperature capability
- New frame design
- Lower system BOM
- Lower AC contact resistance
- Lower tab temperature
- PressFIT Contact Technology
- RoHS compliant
- Completely Pb free
- Superior reliability
Potential Applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
