SIC 2N-CH 1200V 200A
MOSFET, SIC, N-CH, 1.2KV, 200A, MODULE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:200A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FF6MR12W2M1PB11BPSA1 | 91AH7523 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Sic, N-Ch, 1.2Kv, 200A, Module; Mosfet Module Configuration Infineon |
| Packing Method | Tray |
