Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B FS02MR12A8MA2B

Description
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features New semicond. material - silicon carbide Low RDS(on) Low switching losses Low Qg and Crss 4.2 kV DC 1 second insulation High creepage and clearance distances Compact design High power density Direct-cooled PinFin base plate High-performance Si3N4 ceramic PCB and cooler assembly guidelines Integrated temperature sensing diode Benefits Higher temperature cycling capability Integrated diode temperature sensors New plastic material Better temperature capability Lower system BOM Lower AC contact resistance Lower tab temperature PressFIT Contact Technology RoHS compliant Completely Pb free Superior reliability Potential Applications Automotive applications (Hybrid) electrical vehicles (H)EV Motor drives Commercial, construction and agricultural vehicles (CAV) Designers who used this product also designed with 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs 1 2
  • Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B - FS02MR12A8MA2B - Infineon Technologies AG
    Infineon Technologies AG
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Description
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features New semicond. material - silicon carbide Low RDS(on) Low switching losses Low Qg and Crss 4.2 kV DC 1 second insulation High creepage and clearance distances Compact design High power density Direct-cooled PinFin base plate High-performance Si3N4 ceramic PCB and cooler assembly guidelines Integrated temperature sensing diode Benefits Higher temperature cycling capability Integrated diode temperature sensors New plastic material Better temperature capability Lower system BOM Lower AC contact resistance Lower tab temperature PressFIT Contact Technology RoHS compliant Completely Pb free Superior reliability Potential Applications Automotive applications (Hybrid) electrical vehicles (H)EV Motor drives Commercial, construction and agricultural vehicles (CAV) Designers who used this product also designed with 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The FS02MR12A8MA2B is a HybridPACK™ Drive G2 power module with silicon carbide MOSFETs, designed for automotive and electric vehicle motor drives. It features a 1200 V drain-source voltage rating, 390 A continuous drain current, and operates at a junction temperature up to 175°C, with short-term extension to 200°C. The module uses a direct-cooled PinFin baseplate, pressFIT contact technology, and integrated temperature sensing diode. It measures 95.66 mm width, 82.8 mm depth, and 24.5 mm height, with a weight of 760 g. The baseplate insulation withstands 4.2 kV DC for one second, with 10.6 mm creepage and 4.5 mm clearance. Thermal resistance from junction to cooling fluid is 0.115-0.121 K/W, and stray inductance is 8.0 nH. The module complies with AQG 324 and RoHS standards and meets UL 94 V-0 flammability requirements.

Datasheet Summary
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The FS02MR12A8MA2B is a HybridPACK™ Drive G2 power module with silicon carbide MOSFETs, designed for automotive and electric vehicle motor drives. It features a 1200 V drain-source voltage rating, 390 A continuous drain current, and operates at a junction temperature up to 175°C, with short-term extension to 200°C. The module uses a direct-cooled PinFin baseplate, pressFIT contact technology, and integrated temperature sensing diode. It measures 95.66 mm width, 82.8 mm depth, and 24.5 mm height, with a weight of 760 g. The baseplate insulation withstands 4.2 kV DC for one second, with 10.6 mm creepage and 4.5 mm clearance. Thermal resistance from junction to cooling fluid is 0.115-0.121 K/W, and stray inductance is 8.0 nH. The module complies with AQG 324 and RoHS standards and meets UL 94 V-0 flammability requirements.

Suppliers

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Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B - FS02MR12A8MA2B - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B
FS02MR12A8MA2B
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B FS02MR12A8MA2B
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features New semicond. material - silicon carbide Low RDS(on) Low switching losses Low Qg and Crss 4.2 kV DC 1 second insulation High creepage and clearance distances Compact design High power density Direct-cooled PinFin base plate High-performance Si3N4 ceramic PCB and cooler assembly guidelines Integrated temperature sensing diode Benefits Higher temperature cycling capability Integrated diode temperature sensors New plastic material Better temperature capability Lower system BOM Lower AC contact resistance Lower tab temperature PressFIT Contact Technology RoHS compliant Completely Pb free Superior reliability Potential Applications Automotive applications (Hybrid) electrical vehicles (H)EV Motor drives Commercial, construction and agricultural vehicles (CAV) Designers who used this product also designed with 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs TLF80511EJ V33 | OPTIREG™ linear voltage regulators (LDO) TLF35584QVVS1 | OPTIREG™ PMIC TLE8386-2EL | OPTIREG™ switcher TLE9250LE | Automotive CAN transceivers 1EDI3030AS | Gate driver ICs SAK-TC389QP-160F300S AE AURIX™ Family – TC38xQP 1EDI3031AS | Gate driver ICs 1 2

The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles.


Summary of Features

  • New semicond. material - silicon carbide
  • Low RDS(on)
  • Low switching losses
  • Low Qg and Crss
  • 4.2 kV DC 1 second insulation
  • High creepage and clearance distances
  • Compact design
  • High power density
  • Direct-cooled PinFin base plate
  • High-performance Si3N4 ceramic
  • PCB and cooler assembly guidelines
  • Integrated temperature sensing diode

Benefits

  • Higher temperature cycling capability
  • Integrated diode temperature sensors
  • New plastic material
  • Better temperature capability
  • Lower system BOM
  • Lower AC contact resistance
  • Lower tab temperature
  • PressFIT Contact Technology
  • RoHS compliant
  • Completely Pb free
  • Superior reliability

Potential Applications

  • Automotive applications
  • (Hybrid) electrical vehicles (H)EV
  • Motor drives
  • Commercial, construction and agricultural vehicles (CAV)

Designers who used this product also designed with


  • 1EDI3031AS |
    Gate driver ICs
  • TLF80511EJ V33 |
    OPTIREG™ linear voltage regulators (LDO)
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • TLE8386-2EL |
    OPTIREG™ switcher
  • TLE9250LE |
    Automotive CAN transceivers
  • 1EDI3030AS |
    Gate driver ICs
  • SAK-TC389QP-160F300S AE
    AURIX™ Family – TC38xQP
  • 1EDI3031AS |
    Gate driver ICs
  • TLF80511EJ V33 |
    OPTIREG™ linear voltage regulators (LDO)
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • TLE8386-2EL |
    OPTIREG™ switcher
  • TLE9250LE |
    Automotive CAN transceivers
  • 1EDI3030AS |
    Gate driver ICs
  • SAK-TC389QP-160F300S AE
    AURIX™ Family – TC38xQP
  • 1EDI3031AS |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FS02MR12A8MA2B
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS02MR12A8MA2B
Package Type AG-HDSICXT-1
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