Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N009 IAUCN04S7N009

Description
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class Designers who used this product also designed with BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS3035TF | HITFET™ + 12V | automotive low-side switch BTS7120-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTG70013A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch TLE92104-232QX | MOTIX™ multi MOSFET gate driver ICs for BDC motors BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 1 2 3 4
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Description
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class Designers who used this product also designed with BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS3035TF | HITFET™ + 12V | automotive low-side switch BTS7120-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTG70013A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch TLE92104-232QX | MOTIX™ multi MOSFET gate driver ICs for BDC motors BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 1 2 3 4
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Datasheet
Datasheet Summary
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The IAUCN04S7N009 is an automotive-grade N-channel enhancement mode MOSFET designed for high-efficiency power switching applications. It is packaged in a PG-TDSON-8-34 case with a maximum continuous drain current of 268 A at a chip-limited condition, and a maximum drain-source on-resistance of 0.96 mΩ. The device operates at a junction temperature up to 175°C and is qualified to AEC-Q101 standards. It supports a single-pulse avalanche energy of 145 mJ and a peak pulsed drain current of 820 A. The package is rated for MSL1 reflow with a peak temperature of 260°C, is RoHS compliant, and has undergone 100% avalanche testing.

Datasheet Summary
Powered by GS/AI

The IAUCN04S7N009 is an automotive-grade N-channel enhancement mode MOSFET designed for high-efficiency power switching applications. It is packaged in a PG-TDSON-8-34 case with a maximum continuous drain current of 268 A at a chip-limited condition, and a maximum drain-source on-resistance of 0.96 mΩ. The device operates at a junction temperature up to 175°C and is qualified to AEC-Q101 standards. It supports a single-pulse avalanche energy of 145 mJ and a peak pulsed drain current of 820 A. The package is rated for MSL1 reflow with a peak temperature of 260°C, is RoHS compliant, and has undergone 100% avalanche testing.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N009 - IAUCN04S7N009 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N009
IAUCN04S7N009
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N009 IAUCN04S7N009
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class Designers who used this product also designed with BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS3035TF | HITFET™ + 12V | automotive low-side switch BTS7120-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch BTG70013A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch TLE92104-232QX | MOTIX™ multi MOSFET gate driver ICs for BDC motors BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG70020A-1ESW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTS7012-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTN9970LV | MOTIX™ single half-bridge ICs for BDC motors BTS7002-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSS606N | Small signal/small power MOSFET S26KL256SDABHA030 | HYPERFLASH™ BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 1 2 3 4

A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market


Summary of Features

  • OptiMOS™ 7 power MOSFET for automotive applications
  • Very low Ron*A
  • High Avalanche capability
  • High SOA ruggedness
  • Fast switching times (turn on/off)
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Low package resistance and inductance
  • Excellent thermal performance
  • Industry's lowest FOM (RDS (on) x Qg)

Benefits

  • High power efficiency
  • Increased design ruggedness for easy design
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design for Automotive
  • High quality FE&BE production for Automotive

Potential Applications

  • Electric power steering
  • Braking systems
  • Power disconnect switches in zonal architectures
  • Battery management
  • E-fuse boxes
  • DC/DC
  • All Automotive BLDC drives in a wide variety and power class

Designers who used this product also designed with


  • BTG70020A-1ESW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTS7012-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTG7007A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTN9970LV |
    MOTIX™ single half-bridge ICs for BDC motors
  • BTS7002-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BSS606N |
    Small signal/small power MOSFET
  • S26KL256SDABHA030 |
    HYPERFLASH™
  • BTG7016A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTS3035TF |
    HITFET™ + 12V | automotive low-side switch
  • BTS7120-2EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7030-2EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTG70013A-1ESW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • TLE92104-232QX |
    MOTIX™ multi MOSFET gate driver ICs for BDC motors
  • BTG7003A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTG70020A-1ESW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTS7012-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTG7007A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTN9970LV |
    MOTIX™ single half-bridge ICs for BDC motors
  • BTS7002-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BSS606N |
    Small signal/small power MOSFET
  • S26KL256SDABHA030 |
    HYPERFLASH™
  • BTG7016A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUCN04S7N009
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N009
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3 volts
rDS(on) 9.60E-4 ohms
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