BUZ30AH is an N-channel enhancement mode MOSFET rated for 200 V drain-source voltage and 21 A continuous drain current, designed for switching applications. It is packaged in a PG-TO-220-3 case with a thermal resistance from junction to case of 1 K/W and from junction to ambient of 75 K/W. The device is avalanche-rated with a single-pulse avalanche energy of 450 mJ at 21 A drain current and 50 V drain voltage. It operates over a junction temperature range of -55 °C to +150 °C and meets IEC climatic category 55/150/56 and DIN humidity category E. The on-resistance is specified at 0.13 Ω maximum at 13.5 A and 10 V gate-source voltage.
MOSFET N-CH 200V 21A TO220-3
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUZ30AH |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 200 volts |
| IDSS | 21000 milliamps |
