The FS01MR12A8MA2B is a HybridPACK™ Drive G2 power module featuring silicon carbide MOSFETs for automotive drive train applications, with a 1200 V drain-source voltage rating and a continuous drain current of 500 A at 175 °C junction temperature. It supports short-term operation up to 200 °C and includes a direct-cooled PinFin base plate, integrated temperature sensing diode, and PressFIT contact technology. The module has a 4.2 kV DC 1-second insulation rating, 10.6 mm creepage and 4.5 mm clearance distances, and a stray inductance of 8.0 nH. Its package dimensions are defined by a Cu+Ni baseplate with an overall weight of 760 g and mounting torque of 1.8 to 2.2 Nm for the baseplate screws. The module is RoHS compliant and meets UL 94 V-0 flammability standards. It is qualified according to AQG 324.
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FS01MR12A8MA2B |
| Product Name | Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT and CoolSiC™ MOSFET modules - FS01MR12A8MA2B |
| Package Type | AG-HDSICXT-1 |
