Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF5MR20KM1H FF5MR20KM1H

Description
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications AC-DC auxiliary power supplies Energy Storage Systems Photovoltaic Solid-State Circuit Breaker Traction
Request a Quote Datasheet
Description
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications AC-DC auxiliary power supplies Energy Storage Systems Photovoltaic Solid-State Circuit Breaker Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF5MR20KM1H - FF5MR20KM1H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF5MR20KM1H
FF5MR20KM1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF5MR20KM1H FF5MR20KM1H
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). Summary of Features High current density Low switching losses Superior gate oxide reliability Robust integrated body diode High cosmic ray robustness High speed switching module Symmetrical module design Standard construction technique Benefits Minimizes cooling efforts Reduction in volume and size Reduced system costs Improved chip performance Applications AC-DC auxiliary power supplies Energy Storage Systems Photovoltaic Solid-State Circuit Breaker Traction

62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).


Summary of Features

  • High current density
  • Low switching losses
  • Superior gate oxide reliability
  • Robust integrated body diode
  • High cosmic ray robustness
  • High speed switching module
  • Symmetrical module design
  • Standard construction technique

Benefits

  • Minimizes cooling efforts
  • Reduction in volume and size
  • Reduced system costs
  • Improved chip performance

Applications

  • AC-DC auxiliary power supplies
  • Energy Storage Systems
  • Photovoltaic
  • Solid-State Circuit Breaker
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FF5MR20KM1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF5MR20KM1H
Transistor Technology / Material Silicon carbide
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