Infineon Technologies AG Silicon Carbide MOSFET Modules FS55MR12W1M1H_B11

Description
Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Combination of leading edge WBG material and Easy module packages Very low module stray inductance Low and equal gate inductances Very symmetrical internal chip layouts Wide RBSOA 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V Extended maximum gate-source voltages of +23 V and -10 V Tvjop under overload condition up to 175°C PressFIT pins Benefits Outstanding module efficiency which enables system cost advantages System efficiency improvement for reduced cooling requirements Enabling higher frequency to Increase power density Best cost performance ratio with reduced system costs Reduction of drift caused by dynamic components Applications Automotive EV charging General purpose motor drive - variating frequency and voltage Photovoltaic Refrigerators and freezers
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Description
Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Combination of leading edge WBG material and Easy module packages Very low module stray inductance Low and equal gate inductances Very symmetrical internal chip layouts Wide RBSOA 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V Extended maximum gate-source voltages of +23 V and -10 V Tvjop under overload condition up to 175°C PressFIT pins Benefits Outstanding module efficiency which enables system cost advantages System efficiency improvement for reduced cooling requirements Enabling higher frequency to Increase power density Best cost performance ratio with reduced system costs Reduction of drift caused by dynamic components Applications Automotive EV charging General purpose motor drive - variating frequency and voltage Photovoltaic Refrigerators and freezers
Request a Quote Datasheet

Suppliers

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Supplier Links
Silicon Carbide MOSFET Modules - FS55MR12W1M1H_B11 - Infineon Technologies AG
Neubiberg, Germany
Silicon Carbide MOSFET Modules
FS55MR12W1M1H_B11
Silicon Carbide MOSFET Modules FS55MR12W1M1H_B11
Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Combination of leading edge WBG material and Easy module packages Very low module stray inductance Low and equal gate inductances Very symmetrical internal chip layouts Wide RBSOA 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V Extended maximum gate-source voltages of +23 V and -10 V Tvjop under overload condition up to 175°C PressFIT pins Benefits Outstanding module efficiency which enables system cost advantages System efficiency improvement for reduced cooling requirements Enabling higher frequency to Increase power density Best cost performance ratio with reduced system costs Reduction of drift caused by dynamic components Applications Automotive EV charging General purpose motor drive - variating frequency and voltage Photovoltaic Refrigerators and freezers

Sixpack 1200 V CoolSiC™ MOSFET Easy Module

EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology.


Summary of Features

  • Best in Class packages with 12mm height
  • Combination of leading edge WBG material and Easy module packages
  • Very low module stray inductance
  • Low and equal gate inductances
  • Very symmetrical internal chip layouts
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins

Benefits

  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio with reduced system costs
  • Reduction of drift caused by dynamic components

Applications

  • Automotive
  • EV charging
  • General purpose motor drive - variating frequency and voltage
  • Photovoltaic
  • Refrigerators and freezers
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FS55MR12W1M1H_B11
Product Name Silicon Carbide MOSFET Modules
Transistor Technology / Material Silicon carbide
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