FF2000UXTR33T2M1 is a 3.3 kV silicon carbide MOSFET half-bridge module in an XHP™2 package, designed for high-power switching applications such as railway drives and high-frequency converters. The module features a 1000 A continuous and 2000 A peak drain current, with a maximum junction temperature of 175°C and an on-resistance of 1.9 to 2.4 mΩ at 25°C. It uses an AlSiC baseplate and AlN DCB for low thermal impedance, with a mass of 720 g. Terminal creep and clearance distances are 40.0 mm and 31.0 mm respectively, with a comparative tracking index exceeding 600. The module complies with IEC 60747, IEC 60749, and IEC 60068 standards.
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FF2000UXTR33T2M1 |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2000UXTR33T2M1 |
| Transistor Technology / Material | Silicon carbide |
