Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31 L3045A BUZ31 L3045A

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201662-BUZ31 L3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 14.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201662-BUZ31 L3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 14.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31 L3045A - 201662-BUZ31 L3045A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31 L3045A
201662-BUZ31 L3045A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31 L3045A 201662-BUZ31 L3045A
Manufacturer: Infineon Technologies Win Source Part Number: 201662-BUZ31 L3045A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 95W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 14.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201662-BUZ31 L3045A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 95W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 14.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 1120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 201662-BUZ31 L3045A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ31 L3045A
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 95000 milliwatts
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