Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707 F8707

Description
Manufacturer: Infineon Technologies Win Source Part Number: 261856-F8707 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 9.3nC @ 4.5V Max Input Capacitance: 760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707 - 261856-F8707 - Win Source Electronics
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 261856-F8707 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 9.3nC @ 4.5V Max Input Capacitance: 760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707 - 261856-F8707 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707
261856-F8707
TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707 261856-F8707
Manufacturer: Infineon Technologies Win Source Part Number: 261856-F8707 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 9.3nC @ 4.5V Max Input Capacitance: 760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 261856-F8707
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 9.3nC @ 4.5V
Max Input Capacitance: 760pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 261856-F8707
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8707
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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