Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006 IAUAN04S7N006

Description
Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL2a up to 260°C peak reflow Low package resistance/inductanc e 175°C operating temperature Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Power distribution Battery disconnect Zonal architecture DC/DC Designers who used this product also designed with BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLE9471ES | OPTIREG™ Lite SBC BTS70012-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTS70020-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006 - IAUAN04S7N006 - Infineon Technologies AG
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Description
Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL2a up to 260°C peak reflow Low package resistance/inductanc e 175°C operating temperature Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Power distribution Battery disconnect Zonal architecture DC/DC Designers who used this product also designed with BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLE9471ES | OPTIREG™ Lite SBC BTS70012-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTS70020-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4
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Datasheet
Datasheet Summary
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The IAUAN04S7N006 is an automotive-grade N-channel enhancement mode MOSFET designed for power switching applications. It is packaged in a PG-HSOF-5-1 case and operates at a maximum junction temperature of 175°C. The device has a drain-source breakdown voltage of 40 V, a drain-source on-state resistance of 0.57 mΩ at 10 V gate voltage and 100 A drain current, and can handle a continuous drain current of 250 A under DC conditions. It supports a single-pulse avalanche energy of 276 mJ and an avalanche current of 180 A. The MOSFET is qualified to AEC-Q101, meets RoHS standards, and is rated for MSL2a reflow up to 260°C. It features 100% avalanche testing and a thermal resistance from junction to case of 0.84 K/W.

Datasheet Summary
Powered by GS/AI

The IAUAN04S7N006 is an automotive-grade N-channel enhancement mode MOSFET designed for power switching applications. It is packaged in a PG-HSOF-5-1 case and operates at a maximum junction temperature of 175°C. The device has a drain-source breakdown voltage of 40 V, a drain-source on-state resistance of 0.57 mΩ at 10 V gate voltage and 100 A drain current, and can handle a continuous drain current of 250 A under DC conditions. It supports a single-pulse avalanche energy of 276 mJ and an avalanche current of 180 A. The MOSFET is qualified to AEC-Q101, meets RoHS standards, and is rated for MSL2a reflow up to 260°C. It features 100% avalanche testing and a thermal resistance from junction to case of 0.84 K/W.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006 - IAUAN04S7N006 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006
IAUAN04S7N006
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006 IAUAN04S7N006
Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL2a up to 260°C peak reflow Low package resistance/inductanc e 175°C operating temperature Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Power distribution Battery disconnect Zonal architecture DC/DC Designers who used this product also designed with BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS7030-2EPA | PROFET™ +2 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLE9471ES | OPTIREG™ Lite SBC BTS70012-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTS70020-1ESP | PROFET™ +2 12V | automotive smart high-side switch BTG7016A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch 2ED2410-EM | Automotive gate driver ICs BTG7007A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BTG7003A-1EPW | PROFET™ Wire Guard 12V – automotive smart high-side switch BAT54-04W | Schottky Diodes BSS84PW | Small signal/small power MOSFET BTS7050-2EPL | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4

Summary of Features

  • Very low Ron*A
  • High avalanche capability
  • High SOA ruggedness
  • Small gate charges
  • Fast switching times (turn on/off)
  • N-channel - Enhancement mode
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL2a up to 260°C peak reflow
  • Low package resistance/inductance
  • 175°C operating temperature

Benefits

  • High power efficiency
  • Increased design ruggedness for easy design
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design for Automotive
  • High quality FE&BE production for Automotive

Potential Applications

  • Electric power steering
  • Power distribution
  • Battery disconnect
  • Zonal architecture
  • DC/DC

Designers who used this product also designed with


  • BTG7016A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • 2ED2410-EM |
    Automotive gate driver ICs
  • BTG7007A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTG7003A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BAT54-04W |
    Schottky Diodes
  • BSS84PW |
    Small signal/small power MOSFET
  • BTS7050-2EPL |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7040-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7030-2EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • SAK-TC367DP-64F300S AA |
    AURIX™ Family – TC36xDP
  • TLE9471ES |
    OPTIREG™ Lite SBC
  • BTS70012-1ESP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS70020-1ESP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTG7016A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • 2ED2410-EM |
    Automotive gate driver ICs
  • BTG7007A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BTG7003A-1EPW |
    PROFET™ Wire Guard 12V – automotive smart high-side switch
  • BAT54-04W |
    Schottky Diodes
  • BSS84PW |
    Small signal/small power MOSFET
  • BTS7050-2EPL |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7040-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUAN04S7N006
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUAN04S7N006
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3 volts
rDS(on) 5.70E-4 ohms
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