The DF8MR12W1M1HF_B67 is an EasyPACK™ 1B power module integrating CoolSiC™ trench MOSFETs for high-efficiency switching applications, primarily in solar systems. It features PressFIT contacts and an integrated NTC thermistor for temperature monitoring. The module has a 1200 V drain-source voltage rating, with a continuous drain current of 45 A at a case temperature of 65 °C and a peak pulsed current of 100 A. Internal stray inductance is 10 nH, with terminal resistances of 3 mΩ and 2 mΩ between power terminals. The module is mounted using clamps with a force range of 20 to 50 N, weighs 24 g, and operates with a storage temperature range of -40 °C to 125 °C. It meets IEC 60747, IEC 60749, and IEC 60068 industrial application standards, and provides 3 kV RMS insulation voltage with a relative tracking index exceeding 200 and an RTI of 140 °C.
EasyPACK™ 1B 1200 V, 16 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1 and PressFIT Contact Technology.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DF8MR12W1M1HF_B67 |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - DF8MR12W1M1HF_B67 |
| Transistor Technology / Material | Silicon carbide |
