EasyPACK™ 1B module containing two 1200 V CoolSiC™ trench MOSFETs with continuous drain currents of 50 A and 25 A, integrated NTC thermistor, and PressFIT terminals. The module has a mass of 24 g and internal inductance of 14 nH. It supports gate-source voltages from -7 V to +20 V and operates with a junction temperature up to 175 °C. The device meets IEC 60747, IEC 60749, and IEC 60068 industrial application standards and features basic insulation per IEC 61140 with a relative tracking index exceeding 200 and a relative temperature index of 140 °C for electrical insulation.
EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DF17MR12W1M1HF_B86 |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - DF17MR12W1M1HF_B86 |
| Transistor Technology / Material | Silicon carbide |
