Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T IAUCN04S6N017T

Description
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility. Summary of Features Direct cooling path to ECU housing Improves Zth by -20% up to -50% Improves Rth by -20% up to -50% Enables double sided PCB design Provides higher application currents SSO10T TSC is JEDEC listed for open market and 2nd source compatibility Benefits Best Cooling Performance Not heat transfer into PCB Very compact PCB design Reduces system area Reduces cooling efforts & costs (no more vias) Reduces system costs & design efforts High power density & efficiency Potential Applications Electric power steering Power disconnect switches Zone control units E-fuse box DC/DC ABS Braking, e-Booster all automotive applications BLDC drives in a wide variety
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T - IAUCN04S6N017T - Infineon Technologies AG
    Infineon Technologies AG
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Description
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility. Summary of Features Direct cooling path to ECU housing Improves Zth by -20% up to -50% Improves Rth by -20% up to -50% Enables double sided PCB design Provides higher application currents SSO10T TSC is JEDEC listed for open market and 2nd source compatibility Benefits Best Cooling Performance Not heat transfer into PCB Very compact PCB design Reduces system area Reduces cooling efforts & costs (no more vias) Reduces system costs & design efforts High power density & efficiency Potential Applications Electric power steering Power disconnect switches Zone control units E-fuse box DC/DC ABS Braking, e-Booster all automotive applications BLDC drives in a wide variety
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Datasheet
Datasheet Summary
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The IAUCN04S6N017T is an automotive-grade N-channel enhancement mode MOSFET designed for high-current applications, featuring a 40 V drain-source voltage rating and a maximum continuous drain current of 200 A at chip limitation. It is packaged in a PG-LHDSO-10-1 case with top-side cooling capability, supports a maximum junction temperature of 175 °C, and is AEC-Q101 qualified. The device has a typical on-resistance of 1.73 mΩ, is 100% avalanche tested, and meets RoHS standards with a reflow soldering peak temperature rating of 260 °C.

Datasheet Summary
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The IAUCN04S6N017T is an automotive-grade N-channel enhancement mode MOSFET designed for high-current applications, featuring a 40 V drain-source voltage rating and a maximum continuous drain current of 200 A at chip limitation. It is packaged in a PG-LHDSO-10-1 case with top-side cooling capability, supports a maximum junction temperature of 175 °C, and is AEC-Q101 qualified. The device has a typical on-resistance of 1.73 mΩ, is 100% avalanche tested, and meets RoHS standards with a reflow soldering peak temperature rating of 260 °C.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T - IAUCN04S6N017T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T
IAUCN04S6N017T
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T IAUCN04S6N017T
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility. Summary of Features Direct cooling path to ECU housing Improves Zth by -20% up to -50% Improves Rth by -20% up to -50% Enables double sided PCB design Provides higher application currents SSO10T TSC is JEDEC listed for open market and 2nd source compatibility Benefits Best Cooling Performance Not heat transfer into PCB Very compact PCB design Reduces system area Reduces cooling efforts & costs (no more vias) Reduces system costs & design efforts High power density & efficiency Potential Applications Electric power steering Power disconnect switches Zone control units E-fuse box DC/DC ABS Braking, e-Booster all automotive applications BLDC drives in a wide variety

This innovative TSC package enables best cooling, high power density optimized system costs

An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon.
RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ

SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility.


Summary of Features

  • Direct cooling path to ECU housing
  • Improves Zth by -20% up to -50%
  • Improves Rth by -20% up to -50%
  • Enables double sided PCB design
  • Provides higher application currents
  • SSO10T TSC is JEDEC listed
    for open market and 2nd source compatibility

Benefits

  • Best Cooling Performance
  • Not heat transfer into PCB
  • Very compact PCB design
  • Reduces system area
  • Reduces cooling efforts & costs
    (no more vias)
  • Reduces system costs & design efforts
  • High power density & efficiency

Potential Applications

  • Electric power steering
  • Power disconnect switches
  • Zone control units
  • E-fuse box
  • DC/DC
  • ABS Braking, e-Booster
  • all automotive applications
  • BLDC drives in a wide variety
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUCN04S6N017T
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S6N017T
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3 volts
rDS(on) 0.0017 ohms
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