Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005 IAUCN04S7L005

Description
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005 - IAUCN04S7L005 - Infineon Technologies AG
    Infineon Technologies AG
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Description
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class
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Datasheet
Datasheet Summary
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The IAUCN04S7L005 is an automotive-grade, N-channel enhancement-mode MOSFET designed for power conversion in automotive applications. It is packaged in a PG-TDSON-8-43 case with a maximum continuous drain current of 430 A and a drain-source on-resistance of 0.52 mΩ at 25°C. The device operates at junction temperatures up to 175°C and supports single-pulse avalanche energy of 285 mJ at 88 A. It is qualified to AEC-Q101, has a peak reflow temperature rating of 260°C (MSL1), and is 100% avalanche tested. The gate-source voltage is limited to ±16 V.

Datasheet Summary
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The IAUCN04S7L005 is an automotive-grade, N-channel enhancement-mode MOSFET designed for power conversion in automotive applications. It is packaged in a PG-TDSON-8-43 case with a maximum continuous drain current of 430 A and a drain-source on-resistance of 0.52 mΩ at 25°C. The device operates at junction temperatures up to 175°C and supports single-pulse avalanche energy of 285 mJ at 88 A. It is qualified to AEC-Q101, has a peak reflow temperature rating of 260°C (MSL1), and is 100% avalanche tested. The gate-source voltage is limited to ±16 V.

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Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005 - IAUCN04S7L005 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005
IAUCN04S7L005
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005 IAUCN04S7L005
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class

A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market


Summary of Features

  • OptiMOS™ 7 power MOSFET for automotive applications
  • Very low Ron*A
  • High Avalanche capability
  • High SOA ruggedness
  • Fast switching times (turn on/off)
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Low package resistance and inductance
  • Excellent thermal performance
  • Industry's lowest FOM (RDS (on) x Qg)

Benefits

  • High power efficiency
  • Increased design ruggedness for easy design
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design for Automotive
  • High quality FE&BE production for Automotive

Potential Applications

  • Electric power steering
  • Braking systems
  • Power disconnect switches in zonal architectures
  • Battery management
  • E-fuse boxes
  • DC/DC
  • All Automotive BLDC drives in a wide variety and power class
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUCN04S7L005
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7L005
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 1.2 to 1.8 volts
rDS(on) 5.20E-4 ohms
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